Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yuri Uritsky"'
Autor:
Wei Liu, Christopher Lazik, C. R. Brundle, Yuri Uritsky, Malcolm J. Bevan, Paul F. Ma, Tang Wei, Bobek Sarah Michelle, Kulshreshtha Prashant Kumar, Venkatasubramanian Eswaranand, Ghazal Saheli
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 231:57-67
A brief introduction reviews the changes that have occurred in semiconductor wafer processing, which, coupled with developments in X ray Photoelectron Spectroscopy, XPS, instrumentation, have led to XPS becoming a primary materials analysis tool in t
Autor:
Yuri Uritsky, Alberto Herrera-Gomez, A. Sanchez-Martinez, Milton Vázquez-Lepe, P.G. Mani-Gonzalez, Francisco S. Aguirre-Tostado, O. Ceballos-Sanchez, Robert M. Wallace, G. Conti
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 184:487-500
The angular dependence of the X-ray photoelectron spectroscopy (XPS) signal is influenced not only by the electron take-off angle, but also by instrument-related geometrical factors. The XPS signal is, in fact, integrated over the overlap between the
Publikováno v:
Scanning Microscopy 2010.
Ambient dynamic mode (tapping mode or intermittent-contact mode) AFM imaging has been used extensively for the characterization of the topography of nano structures. However, the results are beset with artifacts, because hard tapping of the AFM tip o
Autor:
Yuri Uritsky, Chris Ngai, Chorng-Ping Chang, Motoya Okazaki, Yufei Chen, Mani Thothadri, Paul V. Miller, Manjari Dutta, Deenesh Padhi, Wendy H. Yeh, Raymond Maas, Chris Lazik, Sen-Hou Ko, Stephan Sinkwitz, Martin Jay Seamons, Abraham Anapolsky
Publikováno v:
SPIE Proceedings.
The objective of this study was to examine the defect reduction effect of the wafer edge polishing step on the immersion lithography process. The experimental wafers were processed through a typical front end of line device manufacturing process and
Publikováno v:
Microscopy and Microanalysis. 13
Autor:
Yuri Uritsky, Abraham Anapolsky
Publikováno v:
Microscopy and Microanalysis. 11
Publikováno v:
Microscopy and Microanalysis. 11
Publikováno v:
AIP Conference Proceedings.
Surface roughness and grain morphology are among the critical parameters to be monitored during IC wafer processing, because, with the shrinking device critical dimensions, such parameters become more influential in device performance and manufacturi
Autor:
Yuri Uritsky, G. Conti, Charles C. Wang, P. Mack, J. Wolstenholme, S. Hung, M. Foad, C. R. Brundle, H. Graoui
Publikováno v:
AIP Conference Proceedings.
The capabilities of Angle Resolved X‐Ray Photoelectron Spectroscopy, ARXPS, to provide depth‐resolved elemental and chemical state composition for ultra‐thin films are evaluated for two important front end material situations, Silicon Oxynitrid
Publikováno v:
AIP Conference Proceedings.
Tantalum (Ta) metal has emerged as one of the leading materials of choice for diffusion barrier applications in Cu‐damascene interconnects. For successful implementation, the microstructure, the electrical property and the surface roughness of the