Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yuri Petrusenko"'
Autor:
Bart E. Pieters, Friedhelm Finger, Vladimir Smirnov, Oleksandr Astakhov, Valeriy Borysenko, Yuri Petrusenko, Reinhard Carius
Publikováno v:
Solar Energy Materials and Solar Cells. 129:17-31
We summarize an extensive study on the impact of absorber layer defect density on the performance of amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon solar cells. To study the effects of the absorber layer defect density we subjected set of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61950c77351a2dda1427a9c47f749506
https://doi.org/10.1016/j.solmat.2013.12.024
https://doi.org/10.1016/j.solmat.2013.12.024
Autor:
Vladimir Smirnov, Reinhard Carius, Friedhelm Finger, Valeriy Borysenko, W. Böttler, Yuri Petrusenko, Oleksandr Astakhov
Publikováno v:
Journal of Non-Crystalline Solids. 358:2198-2201
Improvement of the performance of solar cells based on amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon requires understanding of the role of the deep defects – dangling bonds – in the bulk of the intrinsic a-Si:H or μc-Si:H absorber l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08b986d840bc961e88983854f425cb1d
https://doi.org/10.1016/j.jnoncrysol.2011.12.091
https://doi.org/10.1016/j.jnoncrysol.2011.12.091
Autor:
Lu Huang, S.A. Bakai, Yuri Petrusenko, Peter K. Liaw, Tao Zhang, Igor Mikhailovskij, Alexander Bakai, I.M. Neklyudov
Publikováno v:
Metallurgical and Materials Transactions A. 42:1511-1515
Results of the investigation of the point-defect manifestation in the recovery kinetics of Zr41Ti14Cu12.5Ni10Be22.5 and Zr52.5Ti5Cu17.9Ni14.6Al10 bulk-metallic glasses (BMGs) irradiated with 2.5 MeV electrons at 80 K (–193.15 °C) are presented. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8716d8b75a84c34458d980af33b4ba9
https://doi.org/10.1007/s11661-011-0693-0
https://doi.org/10.1007/s11661-011-0693-0
Autor:
Valeriy Borysenko, Friedhelm Finger, Reinhard Carius, Oleksandr Astakhov, Yuri Petrusenko, D. Barankov
Publikováno v:
physica status solidi c. 7:654-657
ESR and conductivity studies have been preformed on μc-Si:H exposed to 2 MeV electron bombardment and successive annealing in order to investigate the influence of the defect density on the electronic properties of n-type μc-Si:H. With this approac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e5ac311ee3790848179c7a6ea04298b
https://doi.org/10.1002/pssc.200982863
https://doi.org/10.1002/pssc.200982863
Autor:
V. Borysenko, Reinhard Carius, Oleksandr Astakhov, Yuri Petrusenko, Friedhelm Finger, Andreas Lambertz, Dmitriy Barankov
Publikováno v:
Journal of Non-Crystalline Solids. 352:1020-1023
Paramagnetic defects in μc-Si:H and a-Si:H with various structure compositions were investigated by electron spin resonance (ESR). The defect density was varied by high energy electron bombardment and subsequent annealing. The spin density increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72e9c905e75f5d659155a8071a6e569b
https://doi.org/10.1016/j.jnoncrysol.2006.01.060
https://doi.org/10.1016/j.jnoncrysol.2006.01.060
Autor:
Igor Mikhailovskij, Lu Huang, Peter K. Liaw, S.A. Bakai, Tao Zhang, Yuri Petrusenko, Alexander Bakai, I.M. Neklyudov
Publikováno v:
Journal of Alloys and Compounds. 504:S198-S200
In spite of the fact that the one-parameter free-volume model is inadequate to provide a reasonable description of structural defects of bulk-metallic glasses (BMGs), this model is still in use due to its simplicity and conformity with naive ideas on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ffe9558646bcbcdefc9e21f2d6750b
https://doi.org/10.1016/j.jallcom.2010.02.164
https://doi.org/10.1016/j.jallcom.2010.02.164
Publikováno v:
Intermetallics. 17:246-248
The sensitivity of radiation effects on structural features in metallic glasses (MG) provides a way of investigating the structure and structural defects of MG through the studies of accumulation and relaxation processes of radiation damages in the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce797cccca5bd9a4ae50b0ca9528ccef
https://doi.org/10.1016/j.intermet.2008.09.015
https://doi.org/10.1016/j.intermet.2008.09.015
Autor:
Yuri Petrusenko, Irina Suvorova, Michail Obolensky, Leonid Bazyma, Sergey Lavrynenko, Vladimir Golovanevskiy, Andrew Kravchenko, Vladimir Beletsky, Andrew Basteev, Oleg Kravchenko, Valeriy Borysenko
Publikováno v:
Hydrogen Storage
It has been shown in the previous investigations (Pradhan et al., 2002; Obolensky et al., 2011a, 2011b) that the postsynthesis treatment (e.g. chemical, heat treatment, milling, irradiation etc.) of single-walled carbon nanotubes (SWCNT) can essentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f009e3992fa0caf6332a55b7befcc2da
http://www.intechopen.com/articles/show/title/postsynthesis-treatment-influence-on-hydrogen-sorption-properties-of-carbon-nanotubes
http://www.intechopen.com/articles/show/title/postsynthesis-treatment-influence-on-hydrogen-sorption-properties-of-carbon-nanotubes
Autor:
Michail Obolensky, Vladimir Beletsky, Andrew Kravchenko, Sergey Lavrynenko, Andrew Basteev, Valeriy Borysenko, Leonid Bazyma, Yuri Petrusenko
Publikováno v:
MRS Proceedings. 1284
The raw single wall carbon nanotubes (SWCNT) were chemically and thermally treated and then milled in ball mill. After this SWCNT were irradiated by electron beam with energy 2.3 MeV up to fluence 1014 e-/cm2 at room temperature. Then SWCNT were satu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9a8745000932529a2be21654b35bbcf
https://doi.org/10.1557/opl.2011.649
https://doi.org/10.1557/opl.2011.649
Autor:
Yuri Petrusenko, D. Barankov, Oleksandr Astakhov, V. Borysenko, Friedhelm Finger, Reinhard Carius
Publikováno v:
Physical review / B 79(10), 104205 (2009). doi:10.1103/PhysRevB.79.104205
The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91efd0cdc6eccb8efb294a906cf05a2f
https://doi.org/10.1103/physrevb.79.104205
https://doi.org/10.1103/physrevb.79.104205