Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yuri N. Yankovski"'
Autor:
Vladimir B. Odzaev, Aliaksandr N. Pyatlitski, Uladislau S. Prasalovich, Natalya S. Kovalchuk, Yaroslav A. Soloviev, Dmitry V. Shestovski, Valentin Yu. Yavid, Yuri N. Yankovski
Publikováno v:
Journal of the Belarusian State University. Physics. :81-92
The electrical characteristics of power MOSFETs additionally implanted with nitrogen ions have been studied. Ion implantation of nitrogen was carried out through a protective oxide of 23 nm thickness with energies of 20 and 40 keV and doses of 1 ⋅
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cca80bef6c76eda061498ce0fa8e1472
https://doi.org/10.33581/2520-2243-2022-3-81-92
https://doi.org/10.33581/2520-2243-2022-3-81-92
Autor:
Uladislau S. Prasalovich, Mukhamed Kabir Bakhadirkhanov, Bayrambay K. Ismaylov, Yuri N. Yankovski, Vladimir B. Odzhaev, Zoir Toxir Kenzhaev
Publikováno v:
Journal of the Belarusian State University. Physics. :32-39
The possibility of adjusting the operational parameters of industrial solar cells produced by the company Suniva based on monocrystalline silicon by means of additional diffusion doping with nickel in the temperature range 700–1200 °C has been inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4e221af9b3d660498ba5e6b9635a0a
https://doi.org/10.33581/2520-2243-2021-3-4-12
https://doi.org/10.33581/2520-2243-2021-3-4-12