Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yuri Klevkov"'
Autor:
Evgeny Onischenko, V. S. Krivobok, Yuri Klevkov, V. S. Bagaev, Sergey I Kolosov, S. N. Nikolaev, A. A. Pruchkina
Publikováno v:
physica status solidi c. 13:481-485
Using measurements of conductivity and low-temperature photoluminescence, we have studied electronic levels in the band gap of CdTe:Bi and CdTe:Bi,Cl single crystals grown by the modified Bridgman technique. Three type of deep levels (EV+0.29 eV, EV+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9bce39bbe550743700413bd3f59610
https://doi.org/10.1002/pssc.201510274
https://doi.org/10.1002/pssc.201510274
Autor:
V. P. Martovitsky, V. S. Krivobok, V. S. Bagaev, E. E. Onishchenko, Yuri Klevkov, Anna Shepel
Publikováno v:
physica status solidi c. 7:1470-1472
Growth of high quality n-type CdTe textures with electron mobility ∼103cm2/V·s and resistivity 5x108-5x109Ohm·cm has been realized using a new technique based on the rapid (1 μm/s) crystallization from vapor phase at 600 °C. Two-stage growth pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66248ae27ed3e961abbeddeb6501a27
https://doi.org/10.1002/pssc.200983163
https://doi.org/10.1002/pssc.200983163