Zobrazeno 1 - 10
of 91
pro vyhledávání: '"Yuri Granik"'
Autor:
Yuri Granik, Philip Wang
Publikováno v:
DTCO and Computational Patterning II.
Publikováno v:
Optical Microlithography XXXIV.
The fast rigorous model (FRM) is a first principles solver based on sequential simulations of photochemical reactions in photoresists. We report the evaluation of FRM relative to compact models (CM1) for NTD OPC model accuracy. We demonstrate equival
Autor:
Daman Khaira, Yuri Granik
Publikováno v:
Optical Microlithography XXXIII.
We have previously reported the exact convolution-based analytical solution to the problem of an elastic resist shrinkage during post-exposure baking (PEB). In contrast to the PEB problem, the elastic shrinking during development in general does not
Autor:
Gurdaman Khaira, Yuri Granik
Publikováno v:
Photomask Technology 2019.
Development of a photoresist is a complex physical process involving solid-to-liquid solution phase transition where a developer solution dissolves a section of a patterned resist. The developer can be selective towards either the exposed region (pos
Autor:
Yuri Granik
Publikováno v:
Photomask Technology 2019.
Modern one-digit technological nodes demand strict reproduction of the optical proximity corrections (OPC) for repeatable congruent patterns. To ensure this property the optical and process simulations must be invariant to the geometrical transformat
Autor:
Yuri Granik, Andres Torres
Publikováno v:
Molecular Systems Design & Engineering. 2:605-615
To realize the full benefit of directed self-assembly (DSA), it is necessary to understand the interplay between the target structures and the process parameters. In this paper, we cover the reasons as to why a compact model and model-based synthesis
Autor:
Germain Fenger, Kostas Adam, Kanstantsin Shchehlik, Yuri Granik, Andrew Burbine, Michael C. Lam, Clement Moyroud, Shashidhara K. Ganjugunte
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIII.
We show how combining machine learning with physical models can improve the overall accuracy of modeling the lithographic process for OPC applications by up to 40%. This level of model accuracy improvement is critical to meet the stringent requiremen
Autor:
Yuri Granik
Publikováno v:
Optical Microlithography XXXII.
Modern photoresists shrink during exposure and post-exposure bake processes. The shrinkage is of an elastic nature, occurring below the glass transition temperatures when material does not flow. This elasticity problem is usually modeled numerically
Publikováno v:
Optical Microlithography XXXII.
Chemically amplified resists undergo various chemical phenomena during the photolithography process such as exposure, post-exposure bake (PEB), and development. These chemical changes induce various stresses causing the deformation of exposed region
Autor:
Yuri Granik
Publikováno v:
Optical Microlithography XXXII.
We explore role of software modeling in semiconductor manufacturing and contrast it with the roles that modeling plays in other fields of human activity. Major trends and challenges in physical and compact process modeling are discussed. We contempla