Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yuri Apanovich"'
Publikováno v:
ISQED
As process technology continues to shrink, interconnect current densities continue to increase, making it ever more difficult to meet chip reliability targets. For microprocessors in the latest 32nm processes, interconnect wear-out via electromigrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2c2dfb8c04cc4fbc48e4462248ffd4
https://doi.org/10.1109/isqed.2011.5770770
https://doi.org/10.1109/isqed.2011.5770770
Publikováno v:
19th Topical Meeting on Electrical Performance of Electronic Packaging and Systems.
Increasing current densities in deep sub-micron designs necessitate accurate power and thermal analysis to help verify compliance with chip-level reliability specifications. This paper presents a thermal-aware analysis flow that accurately captures t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08a8fce9c3331a4e7e4d8c26164125cd
https://doi.org/10.1109/epeps.2010.5642793
https://doi.org/10.1109/epeps.2010.5642793
Autor:
Thorsten Knopp, James F. Buller, Hans vanMeer, Kalyana Kumar, Yuri Apanovich, John Faricelli, James C. Pattison, Bill Gardiol, Greg Constant, Joe Meier, Sean Hannon, Sushant Suryagandh, Kevin Carrejo, Darin Chan, Uwe Hahn, Akif Sultan, A.B. Icel, Rasit O. Topaloglu, Steve F. Hejl, David Wu, Kaveri Mathur, Victor F. Andrade, Larry A. Bair
Publikováno v:
ISQED
Stressors have been used since 90 nm technology to improve device performance to overcome the limitations of scaling. The stressors, including, - CPEN, TPEN, SMT, and e-SiGe to improve NMOS and PMOS drive current exhibit proximity dependence. In addi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271703b2faeb4e35b5986a54968f212e
https://doi.org/10.1109/isqed.2009.4810335
https://doi.org/10.1109/isqed.2009.4810335