Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Yuri Aksenov"'
Autor:
Rene Wientjes, Jerome Belledent, Laurent Le Cam, Johannes van Wingerden, Rob Morton, Yorick Trouiller, Yuri Aksenov, Michael Benndorf
Publikováno v:
SPIE Proceedings.
The continued downscaling of the feature sizes and pitches for each new process generation increases the challenges for obtaining sufficient process control. As the dimensions approach the limits of the lithographic capabilities, new solutions for im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3f528ac64de94ecbae7570fab544a7
https://doi.org/10.1117/12.656359
https://doi.org/10.1117/12.656359
Publikováno v:
SPIE Proceedings.
ArF immersion lithography has opened the road towards increased optical resolution at the 193nm wavelength. Consequently, keeping the same 4X optical demagnification factor, the dimensions on the mask scale down to sub-wavelength values when we enter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435af256006b2a2d55ecf9b0b35d9135
https://doi.org/10.1117/12.659345
https://doi.org/10.1117/12.659345
Autor:
Leonardus H. A. Leunissen, Vicky Philipsen, Anatoly Bourov, Yongfa Fan, Andrew Estroff, Philippe Foubert, Bruce W. Smith, Yuri Aksenov
Publikováno v:
Optical Microlithography XVIII.
It is important to understand how a photomask will polarize incident radiation. This paper presents data collected on binary mask and various attenuated phase shifting mask materials, feature sizes, duty ratios, and illumination schemes via rigorous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899e4954647272b47138cf83cad43d0e
https://doi.org/10.1117/12.602422
https://doi.org/10.1117/12.602422
Publikováno v:
Optical Microlithography XVIII.
The polarization induced by the mask is studied by using a 3D rigorous model, which solves Maxwell equations using the finite element method. The aerial image depends strongly on the change of polarization induced by the materials, thickness of the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39def18764c6914a15ca6412bfd3b994
https://doi.org/10.1117/12.597732
https://doi.org/10.1117/12.597732
Publikováno v:
Optical Microlithography XVIII.
Through ArF immersion lithography a road towards increased optical resolution at the 193nm wavelength has been opened. According to recently proposed roadmaps, ArF immersion lithography will be used for 65nm and 45nm technology nodes. Consequently, k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0c0b873893d4487d1d8e44d7c8e8fd
https://doi.org/10.1117/12.597438
https://doi.org/10.1117/12.597438
Publikováno v:
Design and Process Integration for Microelectronic Manufacturing III.
The shrinking of the dimensions for each new process generation increases the challenges for lithography significantly. In order to guarantee manufacturability for future process generations, a strong interaction between lithography and design is req
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d75371124b7fb29af920cb437acd72be
https://doi.org/10.1117/12.599648
https://doi.org/10.1117/12.599648
Publikováno v:
SPIE Proceedings.
Assessment for introduction of immersion lithography into volume manufacturing has recently started, where one of the key focus areas includes defectivity. Particularly, the possible presence of bubbles in the immersion liquid could act as a defect s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d6c8dd05851100fa510cb347d9e861
https://doi.org/10.1117/12.599643
https://doi.org/10.1117/12.599643