Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yunwei, Ma"'
Autor:
Feng Zhou, Hehe Gong, Ming Xiao, Yunwei Ma, Zhengpeng Wang, Xinxin Yu, Li Li, Lan Fu, Hark Hoe Tan, Yi Yang, Fang-Fang Ren, Shulin Gu, Youdou Zheng, Hai Lu, Rong Zhang, Yuhao Zhang, Jiandong Ye
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Avalanche and surge robustness involve fundamental carrier dynamics under high electric field and current density. They are also prerequisites of any power device to survive common overvoltage and overcurrent stresses in power electronics ap
Externí odkaz:
https://doaj.org/article/902648bfca33430e8df0182cd8faa5a4
Publikováno v:
Shipin Kexue, Vol 44, Iss 6, Pp 292-300 (2023)
The characteristic aroma volatile compounds of black tea were identified, the aroma profile of black tea was dissected, and the perceptual interaction of important characteristic aroma compounds was explored. On this basis, the modified vector model
Externí odkaz:
https://doaj.org/article/451c452849cb4a0fbb89d1888d8ff026
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 42-48 (2020)
Recent progress in p-GaN trench-filling epitaxy has shown promise for the demonstration of GaN superjunction (SJ) devices. However, the presence of n-type interface charges at the regrowth interfaces has been widely observed. These interface charges
Externí odkaz:
https://doaj.org/article/00582700c8e245ffabfc1b5cce9d4da1
Publikováno v:
Frontiers in Public Health, Vol 9 (2021)
Background: Coronary heart disease (CHD) is one of the most common diseases in clinical cardiovascular practice, mainly afflicting the middle-aged and elderly. It will greatly affect elderly quality of life, and even affect their psychological and ph
Externí odkaz:
https://doaj.org/article/6a07983bfdce4fc9ad26f50b433c75c5
Autor:
Yunwei Ma, Ming Xiao, Zhonghao Du, Lei Wang, Eric Carlson, Louis Guido, Han Wang, Lai Wang, Yi Luo, Yuhao Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4224-4230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7473841a13fa99b7fe76b0fd71d47e9c
https://doi.org/10.1109/ted.2022.3186652
https://doi.org/10.1109/ted.2022.3186652
Autor:
Ming Xiao, Boyan Wang, Joseph Spencer, Yuan Qin, Matthew Porter, Yunwei Ma, Yifan Wang, Kohei Sasaki, Marko Tadjer, Yuhao Zhang
Publikováno v:
Applied Physics Letters. 122
Edge termination is the enabling building block of power devices to exploit the high breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors. This work presents a heterogeneous junction termination extension (JTE) based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ff1a9d5751e0e5732ce1dd3180236e
https://doi.org/10.1063/5.0142229
https://doi.org/10.1063/5.0142229
Autor:
Ming Xiao, Yunwei Ma, Zhonghao Du, Yuan Qin, Kai Liu, Kai Cheng, Florin Udrea, Andy Xie, Edward Beam, Boyan Wang, Joseph Spencer, Marko Tadjer, Travis Anderson, Han Wang, Yuhao Zhang
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f065824930a90935bd2fb8ff11a1d80b
https://doi.org/10.1109/iedm45625.2022.10019405
https://doi.org/10.1109/iedm45625.2022.10019405
Publikováno v:
IEEE Transactions on Electron Devices. 68:4854-4861
We present the physics and performance space of the tri-gate GaN junction high electron mobility transistor (Tri-JHEMT), a new tri-gate GaN device proposed recently. In Tri-JHEMTs, p-n junctions wrap around two-dimensional-electron-gas (2DEG) fins in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8f363df03185f25f64aca7a01226569
https://doi.org/10.1109/ted.2021.3103157
https://doi.org/10.1109/ted.2021.3103157
Publikováno v:
IEEE Electron Device Letters. 42:808-811
This work demonstrates multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with a breakdown voltage ( BV ) over 10 kV, the highest BV reported in GaN devices to date. The epitaxial structure consists of a p-GaN cap layer and five AlGaN/GaN channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28cc6e53a2ecc83063983fba54683d0d
https://doi.org/10.1109/led.2021.3076802
https://doi.org/10.1109/led.2021.3076802
Publikováno v:
ACS macro letters. 7(1)
Thermal switches are of great importance to thermal management in a wide variety of applications. However, traditional thermal switches suffer from being large and having slow transition rates. To overcome these limitations, we took advantage of abru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7fb1a314610bcb813e4c5631b9cb03c
https://pubmed.ncbi.nlm.nih.gov/35610916
https://pubmed.ncbi.nlm.nih.gov/35610916