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pro vyhledávání: '"Yunsur Kim"'
Autor:
Hyeonsik Choi, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Jiyong Woo
Publikováno v:
AIP Advances, Vol 14, Iss 1, Pp 015042-015042-7 (2024)
This study shows how the threshold switching (TS) characteristics of a NbOx layer with noninert W electrodes can be improved by introducing an oxide barrier. The ∼10-nm-thick NbOx layer exhibits TS, which is known to originate from NbO2, after elec
Externí odkaz:
https://doaj.org/article/5c43c27379a54128b0ccc262ad43c95e
