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Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS2 Transistors

Autor: Hanul Kim, Jisu Jang, Dongmok Whang, Gil-Ho Kim, Sang-Soo Chee, Yunseob Kim, Sun Jin Yun

Publikováno v: ACS Applied Materials & Interfaces. 12:5031-5039

Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact ...

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91446b9b66c7731aba39c5a853106a70
https://doi.org/10.1021/acsami.9b18591

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Transient Response of h‑BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

Autor: H. Ramamoorthy, Jonathan P. Bird, G. He, Michio Kida, Gil-Ho Kim, C.-P. Kwan, Kohei Sakanashi, Naoki Matsumoto, R. Somphonsane, Miao Zhao, Yunseob Kim, Nobuyuki Aoki, Takashi Taniguchi, S. Yin, Zhi Jin, Kenji Watanabe, J. Nathawat, N. Arabchigavkani, Michael Randle

Publikováno v: ACS Omega, Vol 4, Iss 2, Pp 4082-4090 (2019)
ACS Omega

We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more sta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50d0cdf883c97935b8c990cb9bf7f70
https://doaj.org/article/0f9f3da6bd324b7eac40a24b0369ad72

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Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS

Autor: Jisu, Jang, Yunseob, Kim, Sang-Soo, Chee, Hanul, Kim, Dongmok, Whang, Gil-Ho, Kim, Sun Jin, Yun

Publikováno v: ACS applied materialsinterfaces. 12(4)

Two-dimensional transition metal dichalcogenides (TMDCs) have emerged as promising materials for next-generation electronics due to their excellent semiconducting properties. However, high contact resistance at the metal-TMDC interface plagues the re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::b62edb7210de609cbf7de3d047be7ae6
https://pubmed.ncbi.nlm.nih.gov/31891246

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Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure

Autor: Servin Rathi, Changhee Lee, Dongsuk Lim, Muhammad Atif Khan, Sun Jin Yun, Doo-Hyeb Youn, Yunseob Kim, Gil-Ho Kim

Publikováno v: ACS Applied Materials & Interfaces. 10:23961-23967

Two-dimensional (2D) material-based heterostructures provide a unique platform where interactions between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, the operati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86241a300035a96320ba5e52c45b4555
https://doi.org/10.1021/acsami.8b05549

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Cardiopulmonary resuscitation may cause paradoxical embolism

Autor: Sun Ju Kim, Kyo Jin Ahn, Sung Oh Hwang, Yunseob Kim

Publikováno v: The American Journal of Emergency Medicine. 38:1701.e1-1701.e2

This paper reports a case of paradoxical embolism of right heart thrombi visualized on transesophageal echocardiography during cardiopulmonary resuscitation (CPR). CPR may cause a right-to-left shunt by producing a sudden increase in right atrial pre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64ef271a9c78fcfea291734512b8d7a7
https://doi.org/10.1016/j.ajem.2020.04.088

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