Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy

Autor: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Publikováno v: APL Materials, Vol 11, Iss 4, Pp 041102-041102-12 (2023)

We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular bea

Externí odkaz: https://doaj.org/article/5c8dd87e738d470789d55d5159c1238e

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Autor: Sang-Hoon Bae, Hyunseok Kim, Yongmin Baek, Yongmo Park, Yunjo Kim, Doeon Lee, Kyusang Lee, Jeehwan Kim, Hyun Kum, Wei Kong

Publikováno v: Nature Electronics. 2:439-450

The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7b8d0acf8305ddfc547d31d1574aeb61
https://doi.org/10.1038/s41928-019-0314-2

Polarity governs atomic interaction through two-dimensional materials

Autor: Yuewei Zhang, Doyoon Lee, Kevin M. Daniels, Yang Shao-Horn, Tom Osadchy, D. Kurt Gaskill, Richard J. Molnar, Sang-Hoon Bae, Suresh Sundram, Kyusang Lee, Rachael L. Myers-Ward, Jeffrey C. Grossman, Yang Yu, Jeehwan Kim, Huashan Li, Kuan Qiao, Abdallah Ougazzaden, Yifan Nie, Yunjo Kim, Siddharth Rajan, Kyeongjae Cho, Wei Kong

Publikováno v: Nature Materials
Nature Materials, Nature Publishing Group, 2018, 17 (11), pp.999-1004. ⟨10.1038/s41563-018-0176-4⟩
Nature materials, vol 17, iss 11

International audience; The transparency of two-dimensional (2D) materials to intermolecular interactions of crystalline materials has been an unresolved topic. Here we report that remote atomic interaction through 2D materials is governed by the bin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8328629a63eb0bdd509c9b71e4627ac2
https://doi.org/10.1038/s41563-018-0176-4

Sub-50 cm/s surface recombination velocity in InGaAsP/InP ridges

Autor: Sean Hooten, Eli Yablonovitch, Jeehwan Kim, Ming C. Wu, Nicolas M. Andrade, Yunjo Kim

Publikováno v: Applied Physics Letters. 119:191102

The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 and 1.3 μm telecommunication bands for optical interconnects. However, InGaAsP/InGaAs generally suffer from relat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::247f70e2b8bb704a81b0cc8df6dfd1be
https://doi.org/10.1063/5.0062824

Integration of bulk materials with two-dimensional materials for physical coupling and applications

Autor: Sang-Hoon Bae, Yunjo Kim, Chanyeol Choi, Byung Hun Lee, Jeehwan Kim, Wei Kong, Peng Lin, Hyun Kum, Yongmo Park

Publikováno v: Nature materials. 18(6)

Hybrid heterostructures are essential for functional device systems. The advent of 2D materials has broadened the material set beyond conventional 3D material-based heterostructures. It has triggered the fundamental investigation and use in applicati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8808c177fce018b408e35e1017b0384
https://pubmed.ncbi.nlm.nih.gov/31114063