Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yunik Son"'
Autor:
Hyunsang Hwang, Dong Soo Lee, Yunik Son, Dooho Choi, Man Chang, Dae-Kue Hwang, Dong-jun Seong
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b5b8bc83acbe84b0226b3ad1286ac0a
https://doi.org/10.1109/.2006.1629506
https://doi.org/10.1109/.2006.1629506
Autor:
Hyejung Choi, Won-joo Kim, Dongsoo Lee, Dooho Choi, Eun-hong Lee, Man Chang, In-Kyeong Yoo, Hyunjun Sim, Yunik Son, Hyunsang Hwang, Yoon-dong Park
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We have investigated single crystal Nb-doped SrTiO3 in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb2O5, ZrO x and Cr-SrTiO3), the Pt/single crystal Nb:SrTiO 3 Schottky junction exhibits ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2154ff990731bc94c7c826942f593c83
https://doi.org/10.1109/iedm.2005.1609464
https://doi.org/10.1109/iedm.2005.1609464
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b32066cd90394d8606afcd8ef9a9276
https://doi.org/10.7567/ssdm.2005.b-2-5
https://doi.org/10.7567/ssdm.2005.b-2-5
Publikováno v:
Electrochemical and Solid-State Letters. 10:H324
We have investigated the effect of high-pressure hydrogen annealing (HPHA) on fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs). The relatively high interface state density of back interface induce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c615a2b589d0bfa2a44869f841b98d4e
https://doi.org/10.1149/1.2773963
https://doi.org/10.1149/1.2773963
Publikováno v:
Japanese Journal of Applied Physics. 44:L1460
The existence of series resistance in metal–oxide–semiconductor (MOS) devices can result in both the degradation of capacitance at a high frequency and the decrease in conductance. Using a conventional conductance method that does not consider th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76b5ccb7c27f1000161e33deca486bf
https://doi.org/10.1143/jjap.44.l1460
https://doi.org/10.1143/jjap.44.l1460
Publikováno v:
Applied Physics Letters. 86:092107
The electrical characteristics were evaluated for the metal-oxide-semiconductor (MOS) devices with Ti and Pt gates on the atomic-layer-deposited (ALD) HfO2. The equivalent oxide thickness (EOT) of the Ti gate is shown to be nearly the same as that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547ef76c806a81266b0878d53bcaf5e4
https://doi.org/10.1063/1.1871362
https://doi.org/10.1063/1.1871362
Publikováno v:
Japanese Journal of Applied Physics. 44:L235
The capacitance-voltage (C-V) characteristics with and without light illumination were evaluated for a capacitor with a Pt gate on the atomic-layer-deposited HfO2 dielectric. The flat-band voltage (V fb) is conventionally determined by a C-V curve. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4980b95386c943e3ab49a2b53110abb6
https://doi.org/10.1143/jjap.44.l235
https://doi.org/10.1143/jjap.44.l235
Autor:
Hyunjun Sim, Hyejung Choi, Dongsoo Lee, Man Chang, Dooho Choi, Yunik Son, Eun-Hong Lee, Wonjoo Kim, Yoondong Park, In-Kyeong Yoo, Hyunsang Hwang
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p758-761, 4p
Publikováno v:
Applied Physics Letters; 2/28/2005, Vol. 86 Issue 9, p092107, 3p, 4 Graphs
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop; 2006, p86-87, 2p