Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Yung-sheng Wang"'
Autor:
Yung-Jr Hung, Ping-Feng Hsieh, Yung-Sheng Wang, Wei Lin, Yen-Chieh Wang, Yi-Jen Chiu, Rih-You Chen
Publikováno v:
IEEE Photonics Technology Letters. 32:631-634
Single-wavelength distributed feedback (DFB) lasers are widely used in high-speed access networks; however, the device yield is generally low due to threshold degeneracy resulting from uniform periodic gratings. In this work, we propose and experimen
Autor:
Rih-You Chen, Yi-Jen Chiu, Yen-Chieh Wang, Yung-Sheng Wang, Yung-Jr Hung, Ping-Feng Hsieh, Wei Lin
Publikováno v:
OECC/PSC
We demonstrate DFB lasers with a holographic-generated two-layer moire grating. The resulting DFB lasers exhibit stable single wavelength operation $(> 40\ dB$ SMSR) at its Bragg wavelength and superior static and dynamic device performance.
Autor:
Chia-Lung Tsai, Shoou-Jinn Chang, Wei Lin, Yu-Zung Chiou, Yung-Sheng Wang, Sheng Po Chang, Meng-Chyi Wu
Publikováno v:
IEEE Sensors Journal. 10:1559-1563
The authors report the fabrication of high-performance planar InGaAs P-I-N buried heterostructure photodetectors (BH-PDs) by introducing mesa etching and refilling with semi-insulating InP. It was found that measured 3-dB bandwidth for the fabricated
Autor:
Meng-Yi Wu, Yu Zung Chiou, Chi-Ying Tsai, Shoou-Jinn Chang, Y.H. Huang, W. Lin, Yung-Sheng Wang
Publikováno v:
IEEE Transactions on Electron Devices. 56:1347-1350
An InGaAs buried-heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling with large bandgap and lower concentration semi-insulating InP, it was found that we can reduce the capacitance of P-I-N PDs by 3
Publikováno v:
Journal of the Chinese Chemical Society. 55:431-434
Various 4,5-disubstituted-3-sulfonyl glutarimides 3 were synthesized from α-sulfonyl acetamide 1 and ethyl α,β-disubstituted acrylate esters 2 via stepwise facile [3+3] annulation in moderate yield. The synthesis of pyridin-2-one 9, a key intermed
Publikováno v:
2015 International Symposium on Next-Generation Electronics (ISNE).
A SiN x /SiO x multi-inorganic barrier shows a low water-vapor transmission rate (WVTR) as the SiN x /SiO x pairs increased to five pairs. We found that the WVTR can be significantly reduced after coating a polymer overcoat on the barrier with five S
Autor:
Yung-Sheng Wang, Chaio-Shiung Chen
Publikováno v:
2013 CACS International Automatic Control Conference (CACS).
This paper proposes a self-adaptive interval type-2 neural fuzzy network (SAIT2NFN) control system for the high-precision motion control of permanent magnet linear synchronous motor (PMLSM) drives. The SAIT2NFN is firstly trained to model the inverse
Publikováno v:
2012 International Symposium on Computer, Consumer and Control.
Radio Frequency Identification (RFID) application are becoming increasingly popular such as access control, location tracking, industrial automation, and as a replacement for barcodes in consumer products. There are a lot of system components supplie
Publikováno v:
2007 Asia-Pacific Microwave Conference.
In this paper, high quality InGaAs PIN photodetector prepared on S-doped InP substrate by metal organic chemical vapor deposition (MOCVD) are investigated. With a absorption layer of 2.8 mum and a photosensitive diameter window of 60 mum at reverse b
Publikováno v:
Japanese Journal of Applied Physics. 48:04C108
Ten-period InGaAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region prepared by metal organic chemical vapor deposition (MOCVD) are investigated in this study. At a detection wavelength of