Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yung-Ting Ho"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 481-484 (2020)
In this letter, we successfully demonstrated a AlGaN/GaN high-electron mobility transistor on silicon substrate with high product of maximum oscillation frequency (fmax) and gate length (LG) by reducing the gate resistance (Rg) using a thick, high as
Externí odkaz:
https://doaj.org/article/624d3ed5beae4359b5d35e1fd2047df4
Autor:
Yung-Ting Ho, 何咏庭
107
In this thesis, we take advantages of the superior properties of Gallium Nitride, such as wide bandgap, high breakdown voltage, high electron mobility to fabricate the RF devices with AlGaN/GaN heterostructures on 4-inch HR-substrate. We rep
In this thesis, we take advantages of the superior properties of Gallium Nitride, such as wide bandgap, high breakdown voltage, high electron mobility to fabricate the RF devices with AlGaN/GaN heterostructures on 4-inch HR-substrate. We rep
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/fk6ap3
Publikováno v:
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC).
An research on High Electron Mobility Transistors (HEMTs) fabricate on different type buffer layers including Al x Ga 1-x N stacked buffer and AlGaN/GaN superlattice buffer has been carefully studied. The research including structure analysis via tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a9049a234340e2fdc945ad2854c4ef
https://doi.org/10.1109/ifeec47410.2019.9015146
https://doi.org/10.1109/ifeec47410.2019.9015146
Publikováno v:
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC).
This letter reports on AlGaN/GaN high-electron mobility transistors (HEMTs) on high-resistive silicon substrate using a modified Small-signal model to improve the simulation accuracy of S-parameters. Compared with conventional Small- signal model our
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4208c88c89ba136aafa67a32cfce18ce
https://doi.org/10.1109/ifeec47410.2019.9014673
https://doi.org/10.1109/ifeec47410.2019.9014673