Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Yung-Sang Kim"'
Autor:
Se-Chung Oh, Chilhee Chung, Keon-Soo Kim, J.H. Park, Yongjik Park, Yong-Jun Lee, Jung-hyeon Kim, Hong-Hyun Park, S. Choi, S.O. Park, H. K. Kang, Yung-Sang Kim, Sungho Park, Woojin Kim, Hong-jae Shin, JoonMyoung Lee, Hyung-Shin Kwon, Joo-Hyun Jeong, W. C. Lim, Hyoshin Ahn, Kyoung-Soo Kim
Publikováno v:
2011 International Electron Devices Meeting.
In this article, we report the first experimental demonstration of sub-20nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstr
Autor:
Duck-Han Kim, J-Y Noh, J.S. Yoon, Sungho Park, Junha Lee, M.-W. Hwang, Kyungseok Oh, K-H Yang, Joo-Sung Park, Yung-Sang Kim, Ilgweon Kim
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Recessed channel array transistors (RCAT) for DRAM are implemented with uni-axial and {100} uni-plane channels for the first time. It is found that this structure improves the cell transistor drivability by 25% with the improvement being more effecti