Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yung-Chung Pan"'
Autor:
Yung-Chung Pan, 潘永中
89
We have carried out systematic studies on epitaxial growth of both InN and GaN compounds using metalorganic vapor phase epitaxy technique (MOVPE). Regarding InN, experimental data indicated that its crystalline properties depend strongly on T
We have carried out systematic studies on epitaxial growth of both InN and GaN compounds using metalorganic vapor phase epitaxy technique (MOVPE). Regarding InN, experimental data indicated that its crystalline properties depend strongly on T
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/74533607794198918716
Autor:
Yung-Chung Pan, 潘韻筑
97
The research about WOM communication almost focused on WOM effect of the receiver, and the importance of its influence on consumers’ decision making has been emphasized (Wirtz & Chew, 2002). However, few studies which are from senders explo
The research about WOM communication almost focused on WOM effect of the receiver, and the importance of its influence on consumers’ decision making has been emphasized (Wirtz & Chew, 2002). However, few studies which are from senders explo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/38878301838783439086
Autor:
Yung-Chung Pan, Cheng-Kuo Lin, Jing-Chang Wu, Wen-Kai Wang, Jenq-Shinn Wu, Yi-Jen Chan, Jiun-Tsuen Lai, Chung-Chih Tsai
Publikováno v:
IEEE Transactions on Electron Devices. 51:1214-1217
We have developed the 1-/spl mu/m gate-length devices of In/sub 0.65/Ga/sub 0.65/As pseudomorphic channel (PC) on the In/sub 0.5/Al/sub 0.5/As metamorphic buffer layer to improve the device performance, as compared with the In/sub 0.5/Ga/sub 0.5/As l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a19a5a873f1d7a72be3b0535a4b35b
https://doi.org/10.1109/ted.2004.829858
https://doi.org/10.1109/ted.2004.829858
Autor:
Jehn Ou, Yung Chung Pan, Ming Chih Lee, Chen Ke Shu, Wen Hsiung Chen, Heng Ching Lin, Wei-Kuo Chen
Publikováno v:
Journal of Crystal Growth. :57-60
The InGaN films were grown between 850 C and 600 C by the metalorganic chemical vapor deposition method and characterized by X-ray diffraction and photoluminescence (PL). The incorporation of In into the ternary films was found to increase from x = 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ab5c7775b772cff0c98e798e53a333
https://doi.org/10.1016/s0022-0248(98)00158-4
https://doi.org/10.1016/s0022-0248(98)00158-4
Autor:
Wei Lee, Chen Ke Shu, Yung Chung Pan, Wen Hsiung Chen, Wei-Kuo Chen, C. H. Chuang, Ming Chih Lee, Huai Ying Huang
Publikováno v:
Applied Physics Letters. 80:3349-3351
We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f479abb312eb62517b6d4c9959a733fc
https://doi.org/10.1063/1.1476400
https://doi.org/10.1063/1.1476400
Autor:
Wen Hsiung Chen, H. Chang, Ming Chih Lee, Wei Lee, J. F. Lee, Yung Chung Pan, Sheng-Tsung Wang, Deng-Sung Lin, L. Y. Jang, Wei-Kuo Chen, C. I. Chiang, K. T. Wu
Publikováno v:
Applied Physics Letters. 78:31-33
Ga K-edge x-ray absorption measurements were employed to investigate Mg-doping effects in GaN samples. Strong polarization-dependent x-ray absorption near-edge structures become less pronounced with increasing doping concentration, indicating the for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957bb4f5a64a103b121d43768c633565
https://doi.org/10.1063/1.1337636
https://doi.org/10.1063/1.1337636
Autor:
Wen Hsiung Chen, C. I. Chiang, Yung Chung Pan, Ming Chih Lee, Chia Chou Tsai, C. H. Lin, H. M. Chung, W. C. Chuang, Wei-Kuo Chen, H. Chang
Publikováno v:
Applied Physics Letters. 76:897-899
Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount of In atoms was introduced into the epilayer, the ideality factor of n-GaN Schot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94b23e7f093dc2c0ab0bb9e3db43ffdf
https://doi.org/10.1063/1.125622
https://doi.org/10.1063/1.125622
Autor:
Chen Ke Shu, Yung Chung Pan, Wei-Kuo Chen, Heng Ching Lin, Ming Chih Lee, Wen Hsiung Chen, Jehn Ou
Publikováno v:
Applied Physics Letters. 73:2606-2608
Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 °C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e21eabe8fbedbee8eb83ab0ea4cd3644
https://doi.org/10.1063/1.122520
https://doi.org/10.1063/1.122520
Autor:
Shu Fang Wang, Wen Hsiung Lee, Jyh Fu Lee, Wei-Kuo Chen, Yung Chung Pan, Ming Chih Lee, Chen Ke Shu, Horng Chang, Chin Hwa Lin, Wei Cherng Lin, Chung I. Chiang, Deng-Sung Lin, Ling Yun Jang, Wen Hsiung Chen
Publikováno v:
Optoelectronic Materials and Devices II.
Ga K-edge extended X-ray absorption fine structure (EXAFS) measurement was employed to investigate the local structure and GaN:Mg films grown my metalorganic vapor phase epitaxy (MOVPE) with various Cp 2 Mg dopant flow rates using both in-plane and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83bf98122b40714b2dd76661faf13e92
https://doi.org/10.1117/12.392184
https://doi.org/10.1117/12.392184
Autor:
Wen-Hsiung Chen, Wang-Chung Chuang, Ming Chih Lee, Nie-Chuan Chen, Cheng-Chung Tsai, Hao-Ming Chung, Wei-Kuo Chen, Yung-Chung Pan
Publikováno v:
Japanese Journal of Applied Physics. 40:5871
We have measured the dynamic response of the photocapacitance of a Schottky diode made of an undoped GaN epilayer grown by metalorganic vapor phase epitaxy. The measurements were performed after the suspension of a white light for a specified “wait
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61bbe30a00ce8f467f4407a70e6610c
https://doi.org/10.1143/jjap.40.5871
https://doi.org/10.1143/jjap.40.5871