Zobrazeno 1 - 10
of 181
pro vyhledávání: '"Yung Woo, Park"'
Autor:
Hans He, Kyung Ho Kim, Andrey Danilov, Domenico Montemurro, Liyang Yu, Yung Woo Park, Floriana Lombardi, Thilo Bauch, Kasper Moth-Poulsen, Tihomir Iakimov, Rositsa Yakimova, Per Malmberg, Christian Müller, Sergey Kubatkin, Samuel Lara-Avila
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Incorporating dopants in the graphene lattice to tune its electronic properties is a challenging task. Here, the authors report a strategy to dope epitaxial large-area graphene on SiC by means of spin-coating deposition of F4TCNQ polymers in ambient
Externí odkaz:
https://doaj.org/article/a9171aba0ef94a2c80287a6f5eae9b19
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085320-085320-7 (2016)
We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe2) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structur
Externí odkaz:
https://doaj.org/article/3636b3ceadd34da7ab7f38d772d1b25e
Autor:
Tom Yager, Arseniy Lartsev, Karin Cedergren, Rositsa Yakimova, Vishal Panchal, Olga Kazakova, Alexander Tzalenchuk, Kyung Ho Kim, Yung Woo Park, Samuel Lara-Avila, Sergey Kubatkin
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087134-087134-7 (2015)
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a mi
Externí odkaz:
https://doaj.org/article/62c83a6e4fd2445985c6918333e357f3
Publikováno v:
Current Applied Physics. 34:iii-iv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84bba926d3b5320e4331a81468efed2
https://doi.org/10.1016/j.cap.2021.12.010
https://doi.org/10.1016/j.cap.2021.12.010
Autor:
Min Park, Yong Ju Yun, Minwoo Lee, Dae Hong Jeong, Yongseok Jun, Yung Woo Park, Byung Hoon Kim
Publikováno v:
AIP Advances, Vol 5, Iss 1, Pp 017120-017120-5 (2015)
N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graph
Externí odkaz:
https://doaj.org/article/64156713eebf49ac981b523880ecbd2d
Autor:
Kyung Ho Kim, Samuel Lara-Avila, Hans He, Hojin Kang, Yung Woo Park, Rositsa Yakimova, Sergey Kubatkin
Publikováno v:
Crystals, Vol 7, Iss 12, p 378 (2017)
We used large area, monolayer graphene epitaxially grown on SiC (0001) as contact electrodes for polymer nanofiber devices. Our fabrication process, which avoids polymer resist residues on the graphene surface, results in graphene-polyaniline nanofib
Externí odkaz:
https://doaj.org/article/7a65305f703647df908f562a79c86209
Publikováno v:
Physical review letters. 124(1)
Trans-polyacetylene [$t\text{\ensuremath{-}}{(\mathrm{CH})}_{x}$] possesses twofold ground state degeneracy. Using the Su-Schrieffer-Heeger Hamiltonian, scientists predicted charged solitons to be the primary photoexcitations in $t\text{\ensuremath{-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05db4022030063d73a4c65f8edd613b9
https://pubmed.ncbi.nlm.nih.gov/31976729
https://pubmed.ncbi.nlm.nih.gov/31976729
Autor:
Hojin Kang, Dae Hong Jeong, Byung Hoon Kim, Sung Ju Hong, Yung Woo Park, Minwoo Lee, David Soler-Delgado, Min Park
Publikováno v:
Current Applied Physics. 16:1637-1641
We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199af903fb1de7b7bfa350b390c6fc88
https://doi.org/10.1016/j.cap.2016.09.019
https://doi.org/10.1016/j.cap.2016.09.019
Publikováno v:
Synthetic Metals. 216:83-87
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11650a17685bb5086ada9900ab9fe9b6
https://doi.org/10.1016/j.synthmet.2015.11.001
https://doi.org/10.1016/j.synthmet.2015.11.001
Autor:
Seung Jae Baek, Marija Drndic, Minwoo Lee, A. T. Charlie Johnson, D. I. Kholin, Yung Woo Park, Julio A. Rodríguez-Manzo, Dae Hong Jeong, Kyung Ho Kim, Eugene J. Mele, Eun Sang Choi, Sung Ju Hong, Dawn A. Bonnell, Min Park
Publikováno v:
Synthetic Metals. 216:65-71
We studied the magnetoresistance (MR) of twisted bilayer graphene (tBLG) on electron transparent substrate. Samples of tBLG were assembled on free-standing silicon nitride (SiN x ) membranes ( π and anomalous π Berry’s phase depending on carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::631b0a7c1bfc2c2996767b4ad887b41a
https://doi.org/10.1016/j.synthmet.2015.12.029
https://doi.org/10.1016/j.synthmet.2015.12.029