Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Yunfei En"'
Publikováno v:
IET Microwaves, Antennas & Propagation, Vol 16, Iss 12, Pp 743-751 (2022)
Abstract In this paper, a differentially fed broadband dual‐polarised dipole antenna with parasitic elements is proposed. The presented antenna comprises a pair of strip dipoles as driven elements, four square patches as internal parasitic elements
Externí odkaz:
https://doaj.org/article/c8bbb60e0277491690909f5e370eec74
Autor:
Jiesheng Liu, Meizhen Xiao, Xiao He, Wenxiao Fang, Weiheng Shao, Quan Huang, Guoguang Lu, Lei Wang, Yun Huang, Yunfei En, Ruohe Yao
Publikováno v:
IET Microwaves, Antennas & Propagation, Vol 15, Iss 5, Pp 464-473 (2021)
Abstract A magnetic near‐field probe (H‐field probe) with dual output has been developed using a four‐layer printed circuit board (PCB) technique. To achieve the improvement of detection sensitivity, the symmetrical double‐loop is adopted to
Externí odkaz:
https://doaj.org/article/89936e6735a0476b8503c5528925085c
Autor:
Rui Gao, Jigang Ma, Xiaoling Lin, Xiaowen Zhang, Yunfei En, Guoguang Lu, Yun Huang, Zhigang Ji, Hong Yang, Weidong Zhang, Jianfu Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 539-544 (2021)
AC positive bias temperature instability (PBTI) of germanium nMOSFETs with GeO2/Ge and Si-cap/Ge gate stack was investigated in this brief. AC-DC-AC alternating PBTI stress tests were conducted on both types of devices, the experiment data shows the
Externí odkaz:
https://doaj.org/article/783a590ad6af4dac8859e8e5cf8fc057
Autor:
Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 905-910 (2020)
MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliabi
Externí odkaz:
https://doaj.org/article/1253cc59c1b946079eb8abe8712b2182
Publikováno v:
IEEE Access, Vol 8, Pp 99037-99046 (2020)
The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated. The I/O device degrades more than the Core device under the
Externí odkaz:
https://doaj.org/article/3daecdfb3bab42db96b4e08ef0744ca8
Publikováno v:
International Journal of Antennas and Propagation, Vol 2022 (2022)
In this article, a novel broad circularly polarized antenna (CPA) with circular-slot ground is presented. The circular-slot CPA is consisted of a circular-slot ground, an I-shaped slit and a semicircle loop feeding structure. By using semicircle loop
Externí odkaz:
https://doaj.org/article/626f9959fa5c4425b27030a2150b1eed
Publikováno v:
Micromachines, Vol 9, Iss 3, p 128 (2018)
For the MEMS capacitive accelerometer, parasitic capacitance is a serious problem. Its mismatch will deteriorate the performance of accelerometer. Obtaining the mismatch of the parasitic capacitance precisely is helpful for improving the performance
Externí odkaz:
https://doaj.org/article/35fba8cf9a404daeb927f69d4c314476
Publikováno v:
IEEE Sensors Journal. 23:5901-5910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ef98632aa37807375d9d83848462ad
https://doi.org/10.1109/jsen.2023.3240746
https://doi.org/10.1109/jsen.2023.3240746
Publikováno v:
IEEE Sensors Journal. 23:5920-5926
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::257e6d42346eafb0f4f732a484b62b9f
https://doi.org/10.1109/jsen.2023.3242268
https://doi.org/10.1109/jsen.2023.3242268
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 70:521-525
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75ec428da0426cf6af35c76fbe4b37d
https://doi.org/10.1109/tcsii.2022.3214731
https://doi.org/10.1109/tcsii.2022.3214731