Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Yundong Qi"'
Autor:
Hongjuan Huang, Yibin Zhang, Desheng Zhao, Jianwei Xu, Mingdi Ding, Yundong Qi, Yong Cai, Baoshun Zhang, Zhenlin Miao, Guojun Lu
Publikováno v:
IEEE Electron Device Letters. 37:197-200
A simplified packaging process was successfully developed for a wafer-level light emitting diode (WL-LED) chip aiming at very-high power solid-state lighting (SSL) applications. Compared with the traditional chip-on-board (COB) technology, WL-LED chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e7c26abd4178d2c28a9be83034c9be
https://doi.org/10.1109/led.2015.2509462
https://doi.org/10.1109/led.2015.2509462
Autor:
Zhenlin Miao, Hongjuan Huang, Baoshun Zhang, Jianwei Xu, Desheng Zhao, Yong Cai, Xu Fei, Wei Wang, Yundong Qi, Shi Guangyi, Guojun Lu, Yibin Zhang
Publikováno v:
Electronics Letters. 50:1970-1972
Based on the optimised high-voltage network design and the resistance matching technique, a wafer-level light emitting diode (WL-LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a36a8b8dc80553445ba3e517970ef8e
https://doi.org/10.1049/el.2014.3657
https://doi.org/10.1049/el.2014.3657
Autor:
Rongming Chu, Yugang Zhou, Zhendong Lü, Deliang Wang, Kevin J. Chen, Yundong Qi, Chak Wah Tang, Kei May Lau
Publikováno v:
Journal of Electronic Materials. 34:112-118
The correlation between the resistivity of an undoped GaN/Al2O3 interfacial layer and in-situ reflectance spectrum in metalorganic chemical vapor deposition and the mechanism of this correlation were investigated. The first minimum reflectance during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36f86c401dcf5a8d8566f2d16a5d55a
https://doi.org/10.1007/s11664-005-0187-1
https://doi.org/10.1007/s11664-005-0187-1
Publikováno v:
Journal of Crystal Growth. 272:327-332
GaN-based blue light-emitting diodes (LEDs) with InGaN multi-quantum-wells were grown on patterned sapphire substrates by metalorganic vapor-phase epitaxy (MOVPE). The patterned substrates with 60-nm-deep parallel grooves of different dimensions alon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350a270b92d49823cb1247fddfca6601
https://doi.org/10.1016/j.jcrysgro.2004.08.070
https://doi.org/10.1016/j.jcrysgro.2004.08.070
Publikováno v:
Journal of Crystal Growth. 272:333-340
InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with different well widths and barrier widths were grown on sapphire substrates using metalorganic vapor phase epitaxy (MOVPE). The designed emission wavelengths were in the blue and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f4851cb2c0f981d7b569b71c8f1fcc0
https://doi.org/10.1016/j.jcrysgro.2004.08.097
https://doi.org/10.1016/j.jcrysgro.2004.08.097
Publikováno v:
Hong Kong University of Science and Technology
Bis(cyclopentadienyl)magnesium (Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1a072f2c28cbaedb65535acb11abf49
https://doi.org/10.1007/s11664-001-0187-8
https://doi.org/10.1007/s11664-001-0187-8
Publikováno v:
Journal of Non-Crystalline Solids. 224:31-35
Interpretation of oxygen bonding from X-ray photoelectron spectroscopy (XPS) spectra of oxide glasses is always ambiguous. In this work, Ge(100) substrates with native thin GeO2 layers on them were chosen to investigate the various oxygen bonds in am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e3d6614e11b9190dc13a3f5bbd01987
https://doi.org/10.1016/s0022-3093(97)00450-x
https://doi.org/10.1016/s0022-3093(97)00450-x
Publikováno v:
Applied Physics Letters. 79:4536-4538
The Schottky barrier characteristics of Ni on p-GaN have been investigated using current–voltage–temperature (I–V–T) and capacitance–voltage characteristics (C–V) measurements. Barrier height values ranging from 2.68 to 2.87 eV were obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f2d14a882d06d4e66971162e5f8316
https://doi.org/10.1063/1.1428773
https://doi.org/10.1063/1.1428773
Autor:
W. Tang, Yundong Qi, C.L. Yang, Weikun Ge, Kei May Lau, Jiannong Wang, Zhendong Lü, L.S. Yu, D. Wang, Hu Liang
Publikováno v:
Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701).
Light emitting spatial inhomogeneity in InGaN/GaN multiple quantum well (MQW) blue and green LEDs were observed directly with a microscope. Electroluminescence (EL) spectra of InGaN/GaN QW blue and green LEDs were studied in the temperature range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf3e35d11919d979f3e3934eb2d17b6b
https://doi.org/10.1109/cos.2003.1278201
https://doi.org/10.1109/cos.2003.1278201
Publikováno v:
Journal of Marine Science and Engineering, Vol 11, Iss 1, p 93 (2023)
Improving the produced fluid yield is an effective measure for realizing the crude oil production capacity of offshore platforms. However, for offshore platforms employed in production, using the narrow space of the platform to expand the produced wa
Externí odkaz:
https://doaj.org/article/ae6a85880d7b4013ac1bdb4124037881