Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yunchang Jang"'
Publikováno v:
Materials, Vol 14, Iss 11, p 3005 (2021)
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz:
https://doaj.org/article/a895928c6d814e04b26c81e9a6ea2683
Publikováno v:
Current Applied Physics. 45:105-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfbce51cee1e06d95a71e25444a0ce3
https://doi.org/10.1016/j.cap.2022.11.007
https://doi.org/10.1016/j.cap.2022.11.007
Autor:
Seolhye Park, Jaegu Seong, Yunchang Jang, Hyun-Joon Roh, Ji-Won Kwon, Jinyoung Lee, Sangwon Ryu, Jaemin Song, Ki-Baek Roh, Yeongil Noh, Yoona Park, Yongsuk Jang, Taeyoung Cho, Jae-Ho Yang, Gon-Ho Kim
Publikováno v:
Journal of the Korean Physical Society. 80:647-669
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421fb76f0eebcc41cbacf7cd94d53ba3
https://doi.org/10.1007/s40042-022-00452-8
https://doi.org/10.1007/s40042-022-00452-8
Autor:
Gon-Ho Kim, Nam-Kyun Kim, Sanywon Ryu, Sangmin Jeong, Seolhye Park, Ji-Won Kwon, Yunchang Jang, Hyun-Joon Roh
Publikováno v:
Current Applied Physics. 19:1068-1075
A phenomenology-based virtual metrology (VM) for monitoring SiO2 etching depth was proposed by Park (2015). It achieved high prediction accuracy by introducing newly developed plasma information (PI) variables as designated inputs, called PI-VM. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbda073d5f09a336085a7b93a9f93ced
https://doi.org/10.1016/j.cap.2019.06.001
https://doi.org/10.1016/j.cap.2019.06.001
Publikováno v:
2020 IEEE International Conference on Plasma Science (ICOPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ec9b685d6116feaa0a0bf32065c942
https://doi.org/10.1109/icops37625.2020.9717830
https://doi.org/10.1109/icops37625.2020.9717830
Autor:
Gon-Ho Kim, Younggil Jin, Nam-Kyun Kim, Sangwon Ryu, Hyun-Joon Roh, Seolhye Park, Yunchang Jang
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:232-241
A phenomenological-based virtual metrology (VM) technique is developed for predicting the silicon nitride film thickness in multi-layer plasma-enhanced chemical vapor deposition (PECVD). Particularly, the analysis of optical emission spectroscopy bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69185191c109d98530c80a0410b992bd
https://doi.org/10.1109/tsm.2018.2824314
https://doi.org/10.1109/tsm.2018.2824314
Publikováno v:
Materials, Vol 14, Iss 3005, p 3005 (2021)
Materials
Volume 14
Issue 11
Materials
Volume 14
Issue 11
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f8880abd1a28fef6f26bd41cdc88a2f
https://doi.org/10.3390/ma14113005
https://doi.org/10.3390/ma14113005
Publikováno v:
2018 International Symposium on Semiconductor Manufacturing (ISSM).
Real-time plasma controller for SF 6 /O 2 /Ar etching process plasma was developed to reduce first wafer effect caused by cleaning of plasma facing components. After the cleaning of the reactor, the etch rate of silicon decreased 12 % from the etch r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778c98b6bdc3bed83b2fcd05be9a49dd
https://doi.org/10.1109/issm.2018.8651157
https://doi.org/10.1109/issm.2018.8651157
Autor:
Ki-Baek Roh, Gon-Ho Kim, Hyun-Joon Roh, Yunchang Jang, Jae-Min Song, Byeongjun Bae, Nam-Kyun Kim, Sangwon Ryu, Younggil Jin
Publikováno v:
Journal of the Korean Physical Society. 69:518-524
The type of induced material damage in the tungsten irradiated by using deuterium ions was investigated for various value of the fluence at low energy. Experiments were carried out in an electron cyclotron resonance (ECR) plasma source that provided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b15293e7824cd8c5ecba3e843b0eee
https://doi.org/10.3938/jkps.69.518
https://doi.org/10.3938/jkps.69.518
Autor:
Gon-Ho Kim, Seolhye Park, Yunchang Jang, Sangmin Jeong, Hyun-Joon Roh, Sangwon Ryu, Jae-Myung Choe
Publikováno v:
Thin Solid Films. 603:154-159
Vacuum pumps of different ages were used to prepare Cl 2 based plasmas for use in Cr etching. The effects of the vacuum pump age on the etching results were investigated using optical emission spectroscopy analysis. The composition of gas at the base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::662c7f4c73c5846fa1259c661dee98e5
https://doi.org/10.1016/j.tsf.2016.01.051
https://doi.org/10.1016/j.tsf.2016.01.051