Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Yun-Sook Chae"'
Publikováno v:
Japanese Journal of Applied Physics. 46:6135-6139
The double-patterning process was investigated for line-and-space (L/S) patterns of 65 nm half pitch [k1=0.286, 0.85-numerical aperture (NA) ArF dry system] by plasma treatment of photoresist (PR). The sequence of this patterning is exposure–plasma
Autor:
Sang-Jun Choi, Joo-Tae Moon, George G. Barclay, Yun-Sook Chae, Hyun-Woo Kim, Robert J. Kavanagh, Ji-Soo Kim, Sang-Gyun Woo, Sook Lee
Publikováno v:
Journal of Photopolymer Science and Technology. 15:529-534
It is expected that ArF lithography will be introduced for device manufacturing for sub-100nm nodes, as high NA ArF step and scan systems (NA=O.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA)
Publikováno v:
Journal of Photochemistry and Photobiology A: Chemistry. 106:155-160
The photohydration of 1-aryl-5,5-dimethyl-1,3-hexadiynes in aqueous sulfuric acid (10% H2SO4) yields two types of alkynyl (type A and type B) and allenyl ketones (type C and type D) through both S1 and T1 excited states when diynes are substituted by
Autor:
Man-Hyoung Ryoo, Yun Sook Chae, Sang-Jun Choi, Jung Hwan Hah, Yun-Kyeong Jang, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon
Publikováno v:
SPIE Proceedings.
ArF lithography is in the early stage of mass production and also is going to be further extended to 40nm generation with the aid of immersion lithography. Therefore, it is important to make ArF process production-friendly and extendible for the cont
Autor:
Ju-Hyung Lee, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, Yun-Sook Chae, Yool Kang, Hyun-woo Kim
Publikováno v:
Advances in Resist Technology and Processing XX.
ArF lithography has been successfully implemented for the development of sub-100nm DRAM devices. Such issues as CD (critical dimension) slimming during in-line SEM inspection and low dry etch resistance especially for SiN etch conditions, however, ar
Autor:
Sang-In Lee, Jong-Myeong Lee, Gil Heyun Choi, Young Wook Park, Sang Bom Kang, Byung Hee Kim, Yun Sook Chae
Publikováno v:
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
The barrier properties and the reliability of Al to Si contacts using different types of TiN in the Al-PMD process are investigated. The Al-PMD process is shown to be an excellent metallization technique for high density devices such as Giga-bit DRAM
Autor:
Sung-Ho Lee, Sook Lee, Sang-Jun Choi, Joo-Tae Moon, George G. Barclay, Yun-Sook Chae, Robert J. Kavanagh, Sang-Gyun Woo, Yool Kang, Hyun-woo Kim, Ji-Soo Kim, Dong-Seok Nam
Publikováno v:
SPIE Proceedings.
It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=0.75) become available. We previously reported on a platform, based on a vinyl ether- maleic anhydride (VEM
Autor:
Byung Hee Kim, Jong Myeong Lee, Yun Sook Chae, Sang Bom Kang, Gil Heyun Choi, Young Wook Park, Sang In Lee
Publikováno v:
ICVC '99 6th International Conference on VLSI & CAD (Cat No99EX361); 1999, p222-224, 3p