Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Yun-Shiuan Li"'
Publikováno v:
IEEE Transactions on Electron Devices. 66:5183-5186
This article investigates the effect of mechanical bending strain on the electrical performance and gate-bias stability of flexible p-type tin monoxide (SnO) thin-film transistors (TFTs). The on-polyimide SnO TFTs have an inverted-staggered structure
Autor:
Dun-Yen Kang, Shu-Ming Hsu, Yun-Shiuan Li, I-Chun Cheng, Wen-Ya Lee, Heng-Yu Chi, Chon Hei Lam
Publikováno v:
RSC Adv.. 7:49048-49055
We report on a scalable wet deposition to simultaneously manipulate the self-assembly and orientation of zeolite Linde Type A (LTA) nanocrystals. This process, referred to as surfactant-mediated self-assembly (SMSA), creates zeolite LTA thin films wi
Publikováno v:
IEEE Transactions on Electron Devices. 63:1545-1549
Coplanar top-gate MgZnO/ZnO heterostructure thin-film transistors (TFTs) are fabricated on glass substrates using a large-area processing compatible RF-sputtering technique. The field-effect mobility increases with the Mg content in the MgZnO capping
Publikováno v:
Nanoscale. 8:17427-17432
Nanotube-based ultra-low-k thin films with high Young's modulus composed of single-walled aluminosilicate nanotubes (AlSiNTs) and a trace amount of poly(vinyl alcohol) (PVA) have been developed. The dehydrated AlSiNT film possesses a relative permitt
Autor:
I-Chun Cheng, Feng-Yu Tsai, Cheng-Che Lee, Yun-Shiuan Li, Shu-Ming Hsu, Dung-Yue Su, Jyun-Ci He
Publikováno v:
IEEE Electron Device Letters. 37:46-49
In this letter, we report flexible fully oxide-based complementary metal–oxide–semiconductor (CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc oxide (ZnO) and p-channel tin monoxide (SnO) thin-film tra
Publikováno v:
Plasma Processes and Polymers. 11:89-95
An organic–inorganic hybrid film is deposited from O2/HMDSO plasma. The SiOSi/SiCH3 FTIR absorption ratio of this film increases with the process power and O2/HMDSO precursor flow ratio, resulting in a more inorganic-like film. This hybrid film is
Publikováno v:
IEEE Electron Device Letters. 35:1263-1265
Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor (CMOS) ring oscillators are reported, for the first time, using large-area-compatible sputtering processes. The p-channel tin monoxide (SnO) and n-channel zinc oxide
Autor:
Min-Sheng Tu, Jian-Zhang Chen, Shu-Ming Hsu, Yun-Shiuan Li, Jyun-Ci He, I-Chun Cheng, I-Chung Chiu, Min-Hung Lee, Pin-Guang Chen
Publikováno v:
2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
In this letter, we report enhanced gate-bias and current stress stability of p-type SnO thin-film transistors passivated with SiN x /HfO 2 layers. The improvement is primarily attributed to the effective suppression of bias-induced adsorption of oxyg
Publikováno v:
Plasma Processes and Polymers. 11:100-100
Autor:
Shao-Hsuan Kao, Jian-Zhang Chen, Ching-Fuh Lin, Chih-Hung Tsai, I-Wen Wu, I-Chun Cheng, Yun-Shiuan Li, Chih-I Wu
Publikováno v:
Journal of Physics D: Applied Physics. 46:435502
We demonstrate an organic–inorganic-hybrid thin-film encapsulation technique for organic solar cells. The single-layer encapsulation thin film is deposited from a gas mixture of hexamethyldisiloxane and oxygen by plasma-enhanced chemical vapour dep