Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yun-Kai Lai"'
Publikováno v:
Micromachines, Vol 12, Iss 7, p 756 (2021)
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and s
Externí odkaz:
https://doaj.org/article/ff4622c6085f401fb10232f4dce4be60
Autor:
Yun-Kai Lai, 賴昀楷
94
This study examined the amorphization behavior of Al-based alloying powders synthesized by mechanical alloying technique. It investigated the glass forming ability (GFA) by controlling the alloy compositions. The structural evolution of the a
This study examined the amorphization behavior of Al-based alloying powders synthesized by mechanical alloying technique. It investigated the glass forming ability (GFA) by controlling the alloy compositions. The structural evolution of the a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85358300136294505671
Publikováno v:
Micromachines
Volume 12
Issue 7
Micromachines, Vol 12, Iss 756, p 756 (2021)
Volume 12
Issue 7
Micromachines, Vol 12, Iss 756, p 756 (2021)
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f122036de58f2ef32a1c425d8197c46
Publikováno v:
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b2cce47d7cc53b5a314d81daa306f4
https://doi.org/10.1109/wipdaasia49671.2020.9360283
https://doi.org/10.1109/wipdaasia49671.2020.9360283
Publikováno v:
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC).
In this paper, the novel 4H-SiC junction barrier Schottky diodes(JBS) were designed and discussed in our research group. Quasi-super junction JBS diode has good forward characteristic which is same with the conventional JBS diode. When the quasi-supe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7299993e2c0a510a84c00a71e93e3b33
https://doi.org/10.1109/ifeec47410.2019.9015011
https://doi.org/10.1109/ifeec47410.2019.9015011
Publikováno v:
ICC Workshops
For fast-moving vehicles, radio channels can be severely fast-fading. Under such circumstances, the performance of multi-carrier communication systems, such as OFDM-based ones, are often limited by the inter-carrier interference (ICI) caused by time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4acd6b34cf21a55060367083079842eb
https://doi.org/10.1109/iccw.2015.7247544
https://doi.org/10.1109/iccw.2015.7247544