Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yun-Jun Huh"'
Publikováno v:
Chemical Engineering Science. 53:3729-3739
An adaptive model-predictive control (AMPC) algorithm was applied to the temperature control of a batch polymerization reactor for polymethylmethacrylate (PMMA) and the tracking performance for set point changes was investigated. An experimental cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9071fe5b1a8763c3e62e8feb6055db
https://doi.org/10.1016/s0009-2509(98)00166-3
https://doi.org/10.1016/s0009-2509(98)00166-3
Publikováno v:
Korean Journal of Chemical Engineering. 9:164-168
To detect the cavities formed behind the impeller blades, the electrical resistivity tech-nique was employed in this study. The transition conditions between large cavity and clinging cavity were easily detected by the proposed method and the reliabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b311c8a1fdbed81384cdcd2e1bed85bf
https://doi.org/10.1007/bf02705134
https://doi.org/10.1007/bf02705134
Publikováno v:
Applied Physics Letters. 74:1248-1250
We have compared the electrical characteristics and the depth profile of ultrashallow junctions formed by boron implantation at 0.5 keV and BF2 implantation at 2.2 keV. The modeling of the boron profile was performed using the Monte Carlo method for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35fa204bd33b857e447b25912155303b
https://doi.org/10.1063/1.123514
https://doi.org/10.1063/1.123514
Autor:
Yun-Jun Huh, Jeong Soo Byun, Byung-Hak Lee, Jae Jeong Kim, Chang Hee Han, Ji-Soo Park, Dong Kyun Sohn
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
We found that rapid thermal annealing treatment of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with formation of low resistivity W and high reliable in situ barrier layer, simultaneously. Furthermore, electrical properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::567dec5a71a64e8ecb40d9f82a4c28cb
https://doi.org/10.1109/iedm.1998.746380
https://doi.org/10.1109/iedm.1998.746380
Autor:
Woo-Sik Kim, Dooyoung Yang, Kang-Sik Youn, Yun-Jun Huh, Hyunsang Hwang, Jae-Gyung Ahn, Jae Jeong Kim, Jin Won Park, Jae-Hee Ha
Publikováno v:
Proceedings of International Electron Devices Meeting.
Extensive reliability and performance characteristics of ultrashort channel CMOS devices with various process conditions for giga-bit DRAM were investigated. Using conventional process with various oxide thicknesses and doping profiles, we fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965890a2479b5b7578b8eb194c955835
https://doi.org/10.1109/iedm.1995.499232
https://doi.org/10.1109/iedm.1995.499232
Publikováno v:
MRS Proceedings. 564
The interaction and reactivity of Ti and Co with SiO2 and Si3N4 have been investigated. In the case of Ti salicide, SiO2 sidewall spacer showed no lateral silicide overgrowth and low leakage current between gate and source/drain up to silicidation te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1c7c2560fb5be43e4c0090580bef72
https://doi.org/10.1557/proc-564-77
https://doi.org/10.1557/proc-564-77
Autor:
Dong Kyun Sohn, Hae Wang Lee, Nag Kyun Sung, Jin Won Park, Sang Hyuk Park, Jae-Gyung Ahn, Dae Kwan Kang, Ihl Hyun Cho, Yun Jun Huh, Hong Goo Choi, Seok-Woo Lee, Key Min Lee
Publikováno v:
Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c951b1f00534f968cc6817731f6726f
https://doi.org/10.7567/ssdm.1999.b-6-1
https://doi.org/10.7567/ssdm.1999.b-6-1
Publikováno v:
Japanese Journal of Applied Physics. 37:L1347
In this letter, we have investigated the reliability characteristics 65Å-thick gate oxide grown in various hydrogen partial pressure. Compared with a dry oxide, device reliability characteristics such as charge-to-breakdown and stress-induced leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3ef8777cac8edb8a898938785d1196
https://doi.org/10.1143/jjap.37.l1347
https://doi.org/10.1143/jjap.37.l1347
Autor:
Hyunsang Hwang, Kang-Sik Youn, Jae-Gyung Ahn, Dooyoung Yang, Jae-Hee Ha, Yun-Jun Huh, Jin-Won Park, Jae-Jeong Kim, Woo-Sik Kim
Publikováno v:
Proceedings of International Electron Devices Meeting; 1995, p435-438, 4p
Autor:
Byung Hak Lee, Dong Kyun Sohn, Ji-Soo Park, Chang Hee Han, Yun-Jun Huh, Jeong Soo Byun, Jae Jeong Kim
Publikováno v:
International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p385-388, 4p