Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Yun-Hui Mei"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 966-971 (2021)
SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties. Nevertheless, there are few reports on the systematic characterization of th
Externí odkaz:
https://doaj.org/article/1f7551f9872045d480a79101136b5ab4
Publikováno v:
Applied Sciences, Vol 12, Iss 9, p 4748 (2022)
Electrochemical migration (ECM) of sintered nano-Ag could be a serious reliability concern for power devices with high-density packaging. An anti-ECM nano-Ag-SiOx paste was proposed by doping 0.1wt% SiOx nanoparticles rather than previously used expe
Externí odkaz:
https://doaj.org/article/c02d6c8d63584d09b26c164136b4c097
Publikováno v:
IEEE Transactions on Power Electronics. 38:7118-7127
Publikováno v:
IEEE Transactions on Power Electronics. 37:10149-10153
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:20508-20517
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 12:707-710
Publikováno v:
IEEE Transactions on Device and Materials Reliability. :1-1
Publikováno v:
Power Electronic Devices and Components. 3:100014
Publikováno v:
Materials Letters. 206:1-4
The inhibition effect and mechanism of adding palladium particles to nano-silver paste on the migration of silver in high temperature is reported. The electrochemical migration (ECM) tests showed that silver migration was significantly delayed by the
Autor:
Shuang-Tao Feng1,2 13207567335@163.com, Yun-Hui Mei1,2 yunhui@tju.edu.cn, Gang Chen3 agang@tju.edu.cn, Xin Li1,2 xinli@tju.edu.cn, Guo-Quan Lu1,4 gqlu@vt.edu
Publikováno v:
Materials (1996-1944). Jul2016, Vol. 9 Issue 7, p564. 17p. 1 Color Photograph, 1 Diagram, 2 Charts, 6 Graphs.