Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yun-Feng Kao"'
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between
Externí odkaz:
https://doaj.org/article/3acceb29ffa7492ab61fa86bbe5f21b8
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 465-473 (2020)
Fast and stable switching between states is one of the key factors for the success resistive random access memory (RRAM) development. In an array, wide reset efficiency variation in RRAM cells is found to link to the characteristics of its low freque
Externí odkaz:
https://doaj.org/article/2900cda1d71d4816a0e1c1395dc0937f
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Abstract Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide
Externí odkaz:
https://doaj.org/article/4ed9c5a0d4984ceaa86e2f0836e75173
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 465-473 (2020)
Fast and stable switching between states is one of the key factors for the success resistive random access memory (RRAM) development. In an array, wide reset efficiency variation in RRAM cells is found to link to the characteristics of its low freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::815298f2cdb6579421830980d133dbbe
https://ieeexplore.ieee.org/document/9068260/
https://ieeexplore.ieee.org/document/9068260/
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8aa19b530ec0d2eadaab7add77a3fa40
https://doi.org/10.1186/s11671-021-03569-0
https://doi.org/10.1186/s11671-021-03569-0
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39e34c1d8b6b5d78366d11db73366eb1
http://link.springer.com/article/10.1186/s11671-018-2619-x
http://link.springer.com/article/10.1186/s11671-018-2619-x
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Repeated and fast switching between on/off state without read window degradation is key for the development of resistive random access memory (RRAM) to meet reliable nonvolatile storage demands. In cycling study of the cell, we first established an i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c6f84739e9de9b890df3c0efa54977
https://doi.org/10.1109/vlsi-tsa.2019.8804707
https://doi.org/10.1109/vlsi-tsa.2019.8804707
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
This study proposed a new manufacturing method for improving the fabrication yield of CRRAM in advanced 90nm CMOS logic process. The original CMOS compatible CRRAM is proposed to fabricate by the thickness and size control of contact etch process. Du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd00bd5313637a015c8ec93256c11586
https://doi.org/10.1109/vlsi-tsa.2016.7480498
https://doi.org/10.1109/vlsi-tsa.2016.7480498
Publikováno v:
International archives of allergy and immunology. 106(3)
The role of infectious agents in the pathogenesis of autoimmune diseases has long been a matter of debate. This study investigated the possible role of Epstein-Barr virus (EBV) and human cytomegalovirus (HCMV) infections in the pathogenesis of autoim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca32c67e9e0d58dfa739e825a897bf3d
https://pubmed.ncbi.nlm.nih.gov/7888786
https://pubmed.ncbi.nlm.nih.gov/7888786
Publikováno v:
Japanese Journal of Applied Physics; Apr2017, Vol. 56 Issue 4S, p1-1, 1p