Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Yun Yi Wu"'
Lithium corrosion resistance of aluminum nitride prepared by structural doping with various elements
Autor:
Bao-rang, Li, Shi-Guang, Zhang, Xiang-Lin, Zhao, Bo, Wen, Lin-Xu, Jiao, Liu, Cui, Yong-Quan, Guo, Yun-Yi, Wu, Wan, Li, Qin-wen, Bo
Publikováno v:
In Ceramics International 1 June 2024 50(11) Part B:20729-20741
Autor:
Bao-rang Li, Xiang-chen Liu, Hao-zhi Chen, Yun-yi Wu, Shi-guang Zhang, Ming-yong Jia, Fei Chen
Publikováno v:
Materials Chemistry and Physics. 299:127494
Publikováno v:
Chinese Physics B. 30:077404
Magnetic stiffness determines the stability of a high-temperature superconductor (HTS) magnetic levitation system. The quantitative properties of the physical and geometrical parameters that affect the stiffness of HTS levitation systems should be id
Publikováno v:
Key Engineering Materials. 697:235-238
Sc-doped (Na0.85K0.15)0.5Bi0.5TiO3 (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO3 [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmi
Study on Numerical Simulation of Gas Explosion inside Compression Compartment of Gas Filling Station
Publikováno v:
Advanced Materials Research. :531-538
For the compression compartment safety design in gas filling station, hazards of gas explosion inside compression compartment should be assessed, and explosion energy as well as influence factors should be determined. In this paper, numerical simulat
Publikováno v:
Advanced Materials Research. 790:21-24
PbO-type structure β-FeSe superconductor ceramic were successfully prepared by solid state sinter method in high vacuum state. The structures of the ceramics were investigated by X-ray diffraction and scanning electron microscopy. X-ray diffraction
Publikováno v:
Advanced Materials Research. :595-601
The Bi3.25La0.75O12 films were prepared on the Pt/TiO2/SiO2/Si substrate using RF-magnetron sputtering method. The effects of sputtering conditions, including sputtering pressure, oxygen partial pressure and substrate temperature on microstructure, f
Publikováno v:
Advanced Materials Research. 548:333-340
A series of ferroelectric BIT ceramics with various V2O5dopants were prepared by conventional solid-state route. The influence of V2O5 dopant on microstructural and electrical properties of BIT ceramic were investigated in detail, which were examined
Publikováno v:
Advanced Materials Research. :796-804
Pure, La3+doped at A site, V5+doped at B site, and La3+and V5+co-doped ferroelectric Bi4Ti3O12(BTO), Bi3.25La0.75Ti3O12(BLT), Bi4Ti2.98V0.02O3(BTV) and Bi3.25La0.75Ti2.98V0.02O12(BLTV) were successfully prepared by conventional sintering technique. T
Publikováno v:
Physics Letters A. 318:141-145
The phenomenon of Coulomb gap can be caused by Coulomb force in a mesoscopic circuit. We have investigated the tunnelling process in this circuit. The results indicate that, by varying the external direct voltage, the steps on the current–voltage c