Zobrazeno 1 - 10 of 21 pro vyhledávání: '"Yun Ki Hong"'
1
Akademický článek
Anti-Apoptotic and Anti-Inflammatory Effects of an Ethanolic Extract of Lycium chinense Root against Particulate Matter 10-Induced Cell Death and Inflammation in RBL-2H3 Basophil Cells and BALB/c Mice
Autor: Jisun Lee, Jin Ree, Hyeon Jeong Kim, Hee Jin Kim, Woo Jung Kim, Tae Gyu Choi, Sanghyun Lee, Yun Ki Hong, Seong Bin Hong, Yong Il Park
Publikováno v: Plants, Vol 11, Iss 19, p 2485 (2022)
Particulate matters (PMs) from polluted air cause diverse pulmonary and cardiovascular diseases, including lung inflammation. While the fruits (Goji) of Lycium trees are commonly consumed as traditional medicine and functional food ingredients, the m
Externí odkaz: https://doaj.org/article/3e3c3a93d5a541f88a16e4009290e677
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5
Akademický článek
Image Processor Using 3D-DWT as Part of Health Care Management System
Autor: Kyung-Chang Park, Yun-Ki Hong, Sang-Jin Lee, Yeon-Ho Kim, Younggap You, Tae Won Cho, Kyoung-Rok Cho, Kamran Eshraghian
Publikováno v: Journal of Systemics, Cybernetics and Informatics, Vol 7, Iss 5, Pp 91-94 (2009)
This paper presents a low power and high speed 3D-DWT (three-dimensional discrete wavelet transform) architecture using stacked silicon dies for image compression of medical images. The interconnections of stacked chips are based on TSV (through sili
Externí odkaz: https://doaj.org/article/c82989c2d6f74783a5e839cba8a182ad
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8
Image Processor Using 3D-DWT as Part of Health Care Management System
Autor: Kamran Eshraghian, Kyoung-Rok Cho, Tae Won Cho, Younggap You, Yeon-Ho Kim, Sang-Jin Lee, Yun-Ki Hong, Kyung-Chang Park
Publikováno v: Journal of Systemics, Cybernetics and Informatics, Vol 7, Iss 5, Pp 91-94 (2009)
This paper presents a low power and high speed 3D-DWT (three-dimensional discrete wavelet transform) architecture using stacked silicon dies for image compression of medical images. The interconnections of stacked chips are based on TSV (through sili
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5ba4b4ea970764bf3e2cf72eb0e8dc89
http://www.iiisci.org/Journal/CV$/sci/pdfs/XS576UU.pdf
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9
35-nm Zigzag T-Gate $\hbox{In}_{0.52}\hbox{Al}_{0.48} \hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Metamorphic GaAs HEMTs With an Ultrahigh $f_{\max}$ of 520 GHz
Autor: Young-Su Kim, Yun-Ki Hong, Kang-Sung Lee, Yoon-Ha Jeong
Publikováno v: IEEE Electron Device Letters. 28:672-675
Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f max reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show f maxof 520 GHz, f T of 440 GHz, and maximum tr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9c75ac0f38b7540a29c319494ebdde4
https://doi.org/10.1109/led.2007.901579
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10
Akademický článek
Design of Metal-mesh Electrode-based Touch Panel for Preventing Back-surface Touch Error.
Autor: Kyoung Soo Chae, Yun Ki Hong, Hyun Jun Kim, Jae Youn Jeong, Tae Hee Han
Publikováno v: Sensors & Materials; 2019, Vol. 31 Issue 2, Part 3, p587-593, 7p
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