Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Yun Ki Hong"'
Autor:
Jisun Lee, Jin Ree, Hyeon Jeong Kim, Hee Jin Kim, Woo Jung Kim, Tae Gyu Choi, Sanghyun Lee, Yun Ki Hong, Seong Bin Hong, Yong Il Park
Publikováno v:
Plants, Vol 11, Iss 19, p 2485 (2022)
Particulate matters (PMs) from polluted air cause diverse pulmonary and cardiovascular diseases, including lung inflammation. While the fruits (Goji) of Lycium trees are commonly consumed as traditional medicine and functional food ingredients, the m
Externí odkaz:
https://doaj.org/article/3e3c3a93d5a541f88a16e4009290e677
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 41:382-390
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 41:374-381
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 41:25-38
Autor:
Kyung-Chang Park, Yun-Ki Hong, Sang-Jin Lee, Yeon-Ho Kim, Younggap You, Tae Won Cho, Kyoung-Rok Cho, Kamran Eshraghian
Publikováno v:
Journal of Systemics, Cybernetics and Informatics, Vol 7, Iss 5, Pp 91-94 (2009)
This paper presents a low power and high speed 3D-DWT (three-dimensional discrete wavelet transform) architecture using stacked silicon dies for image compression of medical images. The interconnections of stacked chips are based on TSV (through sili
Externí odkaz:
https://doaj.org/article/c82989c2d6f74783a5e839cba8a182ad
Publikováno v:
Sensors & Materials; 2019, Vol. 31 Issue 2, Part 3, p587-593, 7p
Publikováno v:
Journal of the Korean earth science society. 35:518-528
Publikováno v:
Sensors and Materials. 31:587
Autor:
Kamran Eshraghian, Kyoung-Rok Cho, Tae Won Cho, Younggap You, Yeon-Ho Kim, Sang-Jin Lee, Yun-Ki Hong, Kyung-Chang Park
Publikováno v:
Journal of Systemics, Cybernetics and Informatics, Vol 7, Iss 5, Pp 91-94 (2009)
This paper presents a low power and high speed 3D-DWT (three-dimensional discrete wavelet transform) architecture using stacked silicon dies for image compression of medical images. The interconnections of stacked chips are based on TSV (through sili
Publikováno v:
IEEE Electron Device Letters. 28:672-675
Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f max reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show f maxof 520 GHz, f T of 440 GHz, and maximum tr