Zobrazeno 1 - 10
of 150
pro vyhledávání: '"Yun Heub Song"'
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Publikováno v:
IEEE Access, Vol 7, Pp 149583-149594 (2019)
Data compression reduces the cost of data storage and transmission by decreasing the data size. Previous studies have improved system performance by adaptively choosing the compression ratio (CR) and throughput required for the system by using a trad
Externí odkaz:
https://doaj.org/article/06507c44e45c4bf5ac6b28b3dd15cf0f
Autor:
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100073- (2023)
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negat
Externí odkaz:
https://doaj.org/article/ae1c1d950a9a46879de5e03f422cabc2
Publikováno v:
IEEE Access, Vol 10, Pp 53513-53521 (2022)
A discharge-path-based sensing circuit is proposed to reduce the damage caused by an ovonic threshold switch (OTS) snapback current to a phase-change memory (PCM). OTS devices are used as access devices (selectors) in most PCM systems to increase the
Externí odkaz:
https://doaj.org/article/ffcfcac47efa4a2db1c1b37f9b14a0d4
Autor:
Soo‐Min Jin, Shin‐Young Kang, Hea‐Jee Kim, Ju‐Young Lee, In‐Ho Nam, Tae‐Hun Shim, Yun‐Heub Song, Jea‐Gun Park
Publikováno v:
Electronics Letters, Vol 58, Iss 1, Pp 38-40 (2022)
Abstract The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse widt
Externí odkaz:
https://doaj.org/article/80683cc1d6544114bbd798f46ae2033e
Publikováno v:
ACS Applied Materials & Interfaces. 14:44604-44613
Autor:
Yi Shuang, Shunsuke Mori, Takuya Yamamoto, Shogo Hatayama, Yun-Heub Song, JinPyo Hong, Daisuke Ando, Yuji Sutou
Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random access memories (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF rati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0c98968eb7bc05c5a33197543e3813
https://doi.org/10.21203/rs.3.rs-2486043/v1
https://doi.org/10.21203/rs.3.rs-2486043/v1
Publikováno v:
Materials Research Express, Vol 8, Iss 11, p 115902 (2021)
To evaluate the Thomson effect on the temperature increase in Ge _2 Sb _2 Te _5 (GST)-based phase-change random access memory (PCRAM), we created new dimensionless numbers based on Buckingham’s П theorem. The influence of the Thomson effect on the
Externí odkaz:
https://doaj.org/article/16cdc15cdc384e44ae21dc5bdbdfc1b4
Publikováno v:
IEEE Transactions on Electron Devices. 68:6112-6117
In this article, we proposed a new program operation scheme to overcome the degradation of program window in scaling down of 3-D nand flash memory. First, we investigated natural $V_{th}$ shift (NVS) effect in scaled-down structure and confirmed that
Autor:
Juyoung Lee, Soo-Min Jin, In-Ho Nam, Hea-Jee Kim, Yun-Heub Song, Tae-Hun Shim, Shin-Young Kang, Jea-Gun Park
Publikováno v:
Electronics Letters, Vol 58, Iss 1, Pp 38-40 (2022)
The multi‐level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage‐based pulse. It stably demonstrated five multi‐level states without interference for 90 cycles by varying the pulse width. GeTe/S