Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Yun D. Park"'
Publikováno v:
Journal of Magnetism and Magnetic Materials. 310:2129-2131
When plotting the anomalous Hall coefficient ( R s ) and longitudinal resistivty ( ρ xx ) for a series of annealed Ga 1− x Mn x As epilayers ( x ≈0.055), we find the value of the scaling parameter n , from R S = cρ xx n , to range from one, as-
Autor:
Jeon-Kook Lee, Joonyeon Chang, In Young Kim, Yun D. Park, Jin-Soo Kim, Bae Ho Park, Dal-Young Kim, Hi-Jung Kim, Jehyun Lee, Jang Hee Kim
Publikováno v:
Applied Physics Letters. 84:5037-5039
Dielectric SrMoO4 thin films were deposited from Sr2FeMoO6 target in oxygen atmosphere, showing obvious M–H hysteresis loops at room temperature. It was revealed by transmission electron microscopy that SrFeO3 nanoparticles are dispersed in the SrM
Autor:
Brent P. Gila, Nikoleta Theodoropoulou, Arthur F. Hebard, G. T. Thaler, Cammy R. Abernathy, S. B. Arnason, Stephen J. Pearton, M. E. Overberg, Yun D. Park, R. M. Frazier
Publikováno v:
MRS Proceedings. 690
Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN fil
Publikováno v:
Japanese Journal of Applied Physics. 49:075801
Epitaxial NiO films (epi-NiO) were successfully doped with Al by performing sequential deposition of NiO and AlO x by pulsed laser deposition. Surface morphology and crystallinity were confirmed by atomic force microscope images and X-ray diffraction