Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Yun‐Ran Wang"'
Autor:
Si Chen, Henry Francis, Chih‐Hua Ho, Yun‐Ran Wang, Kai‐Jun Che, Mark Hopkinson, Chao‐Yuan Jin
Publikováno v:
IET Optoelectronics, Vol 14, Iss 3, Pp 100-103 (2020)
In this work, the authors demonstrate the control of quality factor (Q‐factor) is laterally coupled vertical cavities. A 3 μm‐side‐length square cavity directly connected to a 1.5 μm‐width, 10 μm‐length Fabry–Perot (FP) cavity has been
Externí odkaz:
https://doaj.org/article/06e446f66bc34d269f67011a97ec4f0f
Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics
Publikováno v:
Nanophotonics. 12:1469-1479
Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics. The emerging field of QD-based nano
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d08c5b3539c9513916507a68aebe1e5f
https://doi.org/10.1515/nanoph-2022-0584
https://doi.org/10.1515/nanoph-2022-0584
Autor:
Kai-Jun Che, Chih-Hua Ho, Mark Hopkinson, Si Chen, Chao-Yuan Jin, Yun-Ran Wang, Henry Francis
Publikováno v:
IET Optoelectronics, Vol 14, Iss 3, Pp 100-103 (2020)
In this work, the authors demonstrate the control of quality factor (Q‐factor) is laterally coupled vertical cavities. A 3 μm‐side‐length square cavity directly connected to a 1.5 μm‐width, 10 μm‐length Fabry–Perot (FP) cavity has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1921078086a1f1a0fd2f2587a9a0cbc0
https://doi.org/10.1049/iet-opt.2019.0064
https://doi.org/10.1049/iet-opt.2019.0064
Publikováno v:
IET Optoelectronics. 13:23-26
Using cascaded intensity and phase modulators to achieve frequency combs is a common technique. However, this technique has not yet been employed to achieve optical frequency combs (OFCs) at the nanoscale. A theoretical model based on temporal couple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e737c5ec030bf851706634c06dd43b
https://doi.org/10.1049/iet-opt.2018.5026
https://doi.org/10.1049/iet-opt.2018.5026
Publikováno v:
IET Optoelectronics. 13:7-11
Laser interference has been widely used to produce one-dimensional gratings and more recently has shown great potential for two-dimensional patterning. In this study, the authors examine by simulation, its application to in-situ patterning during mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aad70765a946d09c15d8ce564d211ce
https://doi.org/10.1049/iet-opt.2018.5028
https://doi.org/10.1049/iet-opt.2018.5028
Theoretical modelling of single-mode lasing in microcavity lasers via optical interference injection
Autor:
Ri Lu, Henry Francis, Yun-Ran Wang, Mark Hopkinson, Ming-Jun Xia, Ling-Fang Wang, Chao-Yuan Jin, Feng Liu
Publikováno v:
Optics express. 28(11)
The effective manipulation of mode oscillation and competition is of fundamental importance for controlling light emission in semiconductor lasers. Here we develop a rate equation model which considers the spatially modulated gain and spontaneous emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ac1e4c7b76b10d3359f6d369c45a0c7
https://pubmed.ncbi.nlm.nih.gov/32549470
https://pubmed.ncbi.nlm.nih.gov/32549470
Publikováno v:
ACS Applied Nano Materials
Precisely ordered arrays of InAs quantum dots are formed on a nanoisland-structured GaAs (100) surface using in situ laser interference during self-assembled molecular beam epitaxial growth. Nanoislands induced by single-pulse four-beam laser interfe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afd3c96f4d2eb31084cdbdd8a782684c
https://pubmed.ncbi.nlm.nih.gov/32582881
https://pubmed.ncbi.nlm.nih.gov/32582881
Autor:
Yun-Ran Wang, Hopkinson, Mark
Single-pulse laser interference is applied to a Molecular Beam Epitaxy growth chamber to achieve in-situ patterning during the growth of III-V materials, with a focus on producing arrays of III-V quantum dots. We will describe the construction and ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7226de886c7ec4c9b32c97d0e3d4ef9f
Publikováno v:
Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII
Laser interference lithography is used to directly pattern the growing surface during molecular beam epitaxy growth of self-assembled InAs quantum dots on GaAs (100) substrates. Arrays of few-monolayer high nano-islands are formed prior to InAs quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2ab92f80ac9d1d0f5e95481315e9346
Autor:
Im Sik Han, Yun-Ran Wang
Publikováno v:
Journal of Laser Micro/Nanoengineering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6cf357917c5834f13c503bfa426e1a9