Zobrazeno 1 - 10
of 624
pro vyhledávání: '"Yun‐Ho Kim"'
Autor:
Linganna Kadathala, Young-Ouk Park, Jin-Ho Kim, Ji-Sun Lee, Jong Chan Won, Yun Ho Kim, Won-Taek Han, Bok Hyeon Kim
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-14 (2024)
Abstract Alkali-free aluminoborosilicate glasses without (GDMC-Si) and with La2O3 addition (GDMC-La) were fabricated with an aim to develop low dielectric glass fibers for use in printed circuit boards (PCBs) as a reinforcing material in high-speed 5
Externí odkaz:
https://doaj.org/article/e115a22f3ddf4e18a46e15dd1b1a91e5
Autor:
Yun-Ho Kim, Jae-Young Yang, Yoon-Hee Ma, Jin-Choon Lee, Dae-Seok Hwang, Mi-Heon Ryu, Uk-Kyu Kim
Publikováno v:
Maxillofacial Plastic and Reconstructive Surgery, Vol 46, Iss 1, Pp 1-13 (2024)
Abstract Background Many studies have been reported on tracheostomy to prevent upper airway obstruction after surgery. Among these, the scoring system proposed by Cameron et al. quantifies various factors that influence postoperative respiratory fail
Externí odkaz:
https://doaj.org/article/8d44d95caa334c0f8b82124ee2591321
Autor:
Yun-Ho Kim, Jae-Young Yang, Dong-Min Lee, Jae-Yeol Lee, Dae-Seok Hwang, Mi-Heon Ryu, Uk-Kyu Kim
Publikováno v:
Maxillofacial Plastic and Reconstructive Surgery, Vol 46, Iss 1, Pp 1-9 (2024)
Abstract Background For the surgical treatment of oral cancer, it is sometimes necessary to expand intraoral access within the oral cavity. The “swing approach” that involves lip splitting of the mandible and temporary mandibular osteotomy and th
Externí odkaz:
https://doaj.org/article/0540b8bc85c245148766c4125e97eb4d
Autor:
Jongmin Park, Sunkyu Kim, Jeonguk Hwang, Jun Ha Choi, Yujin So, Sarang Park, Min Jae Ko, Jong Chan Won, Jungdon Suk, Mihye Wu, Yun Ho Kim
Publikováno v:
ACS Omega, Vol 9, Iss 13, Pp 15222-15231 (2024)
Externí odkaz:
https://doaj.org/article/8ab2b21efe034727b719a5be2a010e77
Autor:
Dongryul Lee, Donggyu Lee, Sungjune Lee, Hee Jeong Park, Kuk Nam Han, Sam-Jong Choi, Yun Ho Kim, Jihyun Kim
Publikováno v:
JACS Au, Vol 4, Iss 3, Pp 1031-1038 (2024)
Externí odkaz:
https://doaj.org/article/2d90ede61c714993be3a5d5bde85ee58
Autor:
Yun-Ho Kim
Publikováno v:
Fractal and Fractional, Vol 8, Iss 11, p 622 (2024)
The aim of this paper is to establish the existence and uniqueness of solutions to non-local problems involving a discontinuous Kirchhoff-type function via a global minimum principle of Ricceri. More precisely, we first obtain the uniqueness result o
Externí odkaz:
https://doaj.org/article/d40e78c7c77944b7b7997fbe318199fd
Autor:
Yun-Ho Kim, Hyeon Yeol Na
Publikováno v:
AIMS Mathematics, Vol 8, Iss 11, Pp 26896-26921 (2023)
The aim of this paper is to establish the existence of a sequence of infinitely many small energy solutions to nonlocal problems of Kirchhoff type involving Hardy potential. To this end, we used the Dual Fountain Theorem as a key tool. In particular,
Externí odkaz:
https://doaj.org/article/9053fd87f2e949da9d51640b834938d5
Autor:
Yun-Ho Kim
Publikováno v:
Fractal and Fractional, Vol 8, Iss 7, p 426 (2024)
This paper is concerned with nonlocal fractional p-Laplacian Schrödinger–Hardy-type equations involving concave–convex nonlinearities. The first aim is to demonstrate the L∞-bound for any possible weak solution to our problem. As far as we kno
Externí odkaz:
https://doaj.org/article/8e47985373fe4e11b78eaef396f40613
Autor:
Noh-Hwal Park, Eun Sol Shin, Gi-Seong Ryu, Jimin Kwon, Dongseob Ji, Hyunjin Park, Yun Ho Kim, Yong-Young Noh
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 109-118 (2023)
Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach
Externí odkaz:
https://doaj.org/article/e27a9dd0ffcc4c4c8706341d2224a1f9
Autor:
Jinha Ha, Dongkyu Kim, Hyunjin Park, Sungmi Yoo, Yujin So, Jinsoo Kim, Jongmin Park, Jong Chan Won, Yun Ho Kim
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Here, the utilization of a highly uniform water‐borne polyimide (W‐PI) thin film as a gate dielectric layer for large‐scale organic thin film transistors (OTFTs) exceeding 100 cm2 is presented, employing the bar‐coating technique. Th
Externí odkaz:
https://doaj.org/article/ed10d292d02346a889f10d069c50ba0f