Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yuming Ai"'
Publikováno v:
Sensors, Vol 24, Iss 17, p 5721 (2024)
To accurately estimate the 6D pose of objects, most methods employ a two-stage algorithm. While such two-stage algorithms achieve high accuracy, they are often slow. Additionally, many approaches utilize encoding–decoding to obtain the 6D pose, wit
Externí odkaz:
https://doaj.org/article/5e675a1df1454fca918b90053f23d25d
Publikováno v:
Sensors, Vol 23, Iss 1, p 140 (2022)
In the production process of high-voltage coils, a constant tension control system is designed to improve the quality of the transformer. The system is composed of a controller, execution structure, detection structure, etc. The active disturbance re
Externí odkaz:
https://doaj.org/article/485871ebc23143e8b5bc25404356d830
Autor:
Husam N. Alshareef, Huiping Jia, S. Gowrisanker, Manuel Quevedo-Lopez, Robert M. Wallace, Yuming Ai, Bruce E. Gnade
Publikováno v:
Thin Solid Films. 531:509-512
Both operational lifetime and shelf-life of copper phthalocyanine (CuPc) based high frequency Schottky diodes have been studied in this work. Thin films of amorphous Si ( a -Si) and polychloro-(para-xylylene) (parylene C) are deposited as a barrier l
Publikováno v:
Thin Solid Films. 450:312-315
An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO2/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We study the differences in hydrogenated amorphous Si (a-Si:H) depositions between Hot-Wire Chemical Vapor Deposition (HWCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) for high efficiency a-Si/c-Si heterojunction (HJ) solar cells. In HWCV
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350°C, do
Publikováno v:
2008 Flexible Electronics and Displays Conference and Exhibition.
In this work we demonstrate a photo-lithographic based process to integrate organic-based devices including rectifiers, ring oscillators, current mirrors, inverters, diodes and capacitors on flexible substrates for RFID and flexible display applicati
Autor:
Husam N. Alshareef, S. Gowrisanker, Isaac Trachtenberg, R. Barnett, Manuel Quevedo-Lopez, B. E. Gnade, H. J. Stiegler, H. Edwards, Yuming Ai, H. Jia
Publikováno v:
Electrochemical and Solid-State Letters. 12:H50
We demonstrate a systematic approach to optimize pentacene-based thin-film transistors using a photolithographic-based process to integrate basic circuit components such as organic-based diodes, transistors, and capacitors to fabricate circuits such
Autor:
Huiping Jia, Husam N. Alshareef, B. E. Gnade, S. Gowrisanker, Yuming Ai, Eric M. Vogel, Manuel Quevedo-Lopez
Publikováno v:
Applied Physics Letters. 92:153305
Pentacene-based organic thin-film transistors have been fabricated using photolithography and the bottom contact structure using parylene as the gate dielectric. Device performance was optimized by varying the thickness ratio of pentacene to Au conta
Autor:
Isaac Trachtenberg, Huiping Jia, Robert M. Wallace, S. Gowrisanker, H. J. Stiegler, Raymond Barnett, Hal Edwards, Yuming Ai, Eric M. Vogel, Bruce E. Gnade
Publikováno v:
Applied Physics Letters. 90:262105
Organic semiconductor-based Schottky diodes operating at 14MHz, fabricated using conventional photolithographic and etching processes, have been demonstrated. Copper phthalocyanine is the semiconductor, with gold and aluminum as the Ohmic and Schottk