Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Yumin Koh"'
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115203-115203-5 (2021)
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature var
Externí odkaz:
https://doaj.org/article/b5ca43ac0b4940ac8a348aef7212a5be
Autor:
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085106-085106-5 (2018)
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency
Externí odkaz:
https://doaj.org/article/9990bf2574934118aafc849486d08c45
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:2503-2507
A simple and convenient method for the formation of Pt nanoparticulate films as a sensing material by controlling deposition rates is demonstrated to realize AlGaN/GaN high electron mobility transistor-based high-sensitivity hydrogen gas sensors. The
Autor:
Yumin Koh, Kyung Ho Park, So Jeong Park, Gyu Tae Kim, Do Kywn Kim, Dae-Young Jeon, Chu-Young Cho
Publikováno v:
Microelectronic Engineering. 199:40-44
The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface pro
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115203-115203-5 (2021)
AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature var
Autor:
Yumin Koh, Yongjo Park, Donghyun Lee, In-Su Shin, Dong-Hyun Kim, Keun Man Song, Chan Soo Shin, Euijoon Yoon
Publikováno v:
Current Applied Physics. 15:S11-S15
A new method of growing a semi-insulating GaN layer for high electron mobility transistor (HEMT) structure by eliminating a degenerate layer located at the GaN/sapphire interface is proposed. In the process, during the temperature ramp-up after the g
Autor:
Sang Woon Lee, Ju-Young Pyo, Chu-Young Cho, Hyeong-Ho Park, Yumin Koh, Won-Ju Cho, Kyung Ho Park, Jin-Hyeok Jeon
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085106-085106-5 (2018)
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency
Publikováno v:
Journal of electromagnetic engineering and science. 9:218-222
In this paper, we present a CPW-based 77 GHz 3-stage power amplifier MMIC for automotive radar systems. The power amplifier MMIC has been realized using a 130 nm In0.88GaP/In0.4AlAs/In0.4GaAs metamorphic high-electron mobility transistors(mHEMTs) tec
Autor:
Youngwoo Kwon, Kwang-Seok Seo, Yumin Koh, Ji Hoon Kim, Youngrak Park, Young-Min Kim, Jinho Jeong
Publikováno v:
Microwave and Optical Technology Letters. 54:2624-2626
A broadband watt-level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K- band. The quadruple-stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt-leve
Autor:
Ji Hoon Kim, Young-Min Kim, Jinho Jeong, Kwang-Seok Seo, Seokchul Lee, Yumin Koh, Youngwoo Kwon
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:323-325
A V-band monolithic microwave integrated circuit power amplifier (PA) using metamorphic high electron mobility transistors (mHEMTs) is developed using a stacked-FET structure. Design methodology to optimize the series power combining power amplifiers