Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Yumiko Maenaka"'
Autor:
Hiroshi Mohri, Kunihiro Hosono, Keiko Hattori, Shogo Narukawa, Wayne Ruch, Morihisa Hoga, Yoshinori Nagaoka, Yumiko Maenaka, Toshio Suzuki, Masayoshi Mori, Venu Vellanki
Publikováno v:
SPIE Proceedings.
We have evaluated a unified mask pattern data format named "OASIS.MASK"1 and a unified job deck format named "MALY" 2 for mask tools as the input data formats of the inspection tool using the mask data and the photomask produced with the 65nm design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a854f63b79d89bcfd6f1f78174f95fb6
https://doi.org/10.1117/12.824351
https://doi.org/10.1117/12.824351
Autor:
William Huang, Kazuko Jochi, Venu Vellanki, Gregg Inderhees, Aditya Dayal, Paul Yu, Yumiko Maenaka, Chunlin Chen, Ki Hun Park, Andrew Cao, David Kim
Publikováno v:
SPIE Proceedings.
As the design rule continues to shrink towards 3x nm and below, lithographers are searching for new and advanced methods of mask lithography such as immersion, double patterning and extreme ultraviolet lithography (EUVL). EUV lithography is one of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76cb5ee7070a08246514c55321f1fe23
https://doi.org/10.1117/12.747163
https://doi.org/10.1117/12.747163
Autor:
Hidemichi Imai, Tsukasa Abe, Naoya Hayashi, Akiko Fujii, Hiroshi Mohri, Shiho Sasaki, Yumiko Maenaka, Yasushi Sato, Hironobu Takaya
Publikováno v:
SPIE Proceedings.
EUV mask pattern inspection was investigated using current DUV reticle inspection tool. Designed defect pattern of 65nm node and 45nm node were prepared. We compared inspection sensitivity between before buffer etch pattern and after buffer etch patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c374eecd8ab665d686341e26425088cd
https://doi.org/10.1117/12.728935
https://doi.org/10.1117/12.728935