Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Yumiko Ikebe"'
Autor:
Giichiro Uchida, Kodai Masumoto, Mikito Sakakibara, Yumiko Ikebe, Shinjiro Ono, Kazunori Koga, Takahiro Kozawa
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract To realize high-capacity Si anodes for next-generation Li-ion batteries, Si/Sn nanowires were fabricated in a single-step procedure using He plasma sputtering at a high pressure of 100–500 mTorr without substrate heating. The Si/Sn nanowir
Externí odkaz:
https://doaj.org/article/5bba688b9e8b40999c30c97182a0094c
Autor:
Giichiro Uchida, Kenta Nagai, Yuma Habu, Junki Hayashi, Yumiko Ikebe, Mineo Hiramatsu, Ryota Narishige, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract We fabricated nanostructured Ge and GeSn films using He radio-frequency magnetron plasma sputtering deposition. Monodisperse amorphous Ge and GeSn nanoparticles of 30–40 nm size were arranged without aggregation by off-axis sputtering depo
Externí odkaz:
https://doaj.org/article/b6316a3f220b4c8b8929ccd026462821
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 3, Pp 153-158 (2022)
We fabricated nanocrystalline Ge films using radio-frequency (RF) magnetron plasma sputtering deposition under a high Ar-gas pressure. The Ge nanograins changed from amorphous to crystalline when the distance between the Ge sputtering target and the
Externí odkaz:
https://doaj.org/article/8fe2579872d64889bbc1495e2118f6ab
Publikováno v:
Japanese Journal of Applied Physics.
Plasma-sputtered amorphous films for all-solid-state Li+-ion batteries are investigated. In LiPON electrolyte films, the amount of N incorporated into LiPO films is controlled by the sputtering discharge gas. Ionic conductivity increases with increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c3859ec9a5e8e87b1c721651bf250f
https://doi.org/10.35848/1347-4065/acd55d
https://doi.org/10.35848/1347-4065/acd55d
Autor:
Kenta Nagai, Yumiko Ikebe, Naho Itagaki, Masaharu Shiratani, Junki Hayashi, Ryota Narishige, Mineo Hiramatsu, Giichiro Uchida, Yuichi Setsuhara, Yuma Habu
Publikováno v:
Scientific Reports
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
We fabricated nanostructured Ge and GeSn films in He radio-frequency magnetron plasma sputtering deposition. Monodisperse amorphous Ge and GeSn nanoparticles of 30-40 nm in size were orderly arranged without aggregation by off-axis sputtering deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::441a3ab75dab0943ab54fbe6fc058ecd
https://doi.org/10.1038/s41598-022-05579-z
https://doi.org/10.1038/s41598-022-05579-z
Publikováno v:
Journal of Materials Science and Chemical Engineering. :19-27
Dense sintered bodies of proton conducting BaZrO3 (BZ) and Y-doped BaZrO3 (BZ-Y) were obtained at 1600℃ for a short sintering time of 5 hours, by the addition of NiO as a sintering promotion agent. The relative density and grain growth of samples,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab8af8c4c1ecf8a4890543cdf334916
https://doi.org/10.4236/msce.2018.66002
https://doi.org/10.4236/msce.2018.66002
Autor:
Yuma Habu, Kenta Nagai, Giichiro Uchida, Yumiko Ikebe, Mineo Hiramatsu, Yuichi Setsuhara, Junki Hayashi, Naho Itagaki, Ryota Narishige, Masaharu Shiratani
Publikováno v:
Japanese Journal of Applied Physics. 61:SA1002
We present a study on morphological control of nanostructured Ge films by the Ar gas pressure in plasma sputtering deposition. In the low Ar-gas-pressure range, aggregated islands of amorphous grains are formed on the film surface, while in the high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d27b8c6737be63d557d445d0f0eee5
https://doi.org/10.35848/1347-4065/ac2b7b
https://doi.org/10.35848/1347-4065/ac2b7b
Publikováno v:
Journal of Alloys and Compounds. 452:401-405
In-free and In-added MgB 2 thick films were prepared on ceramic substrates (MgO, YSZ, SrTiO 3 and Al 2 O 3 ) using a simple screen printing method. For In-free films, the adhesion between the films and the substrates were very weak; about 10–40% of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dec74c8eaae4638a21e207ac392f327
https://doi.org/10.1016/j.jallcom.2006.11.047
https://doi.org/10.1016/j.jallcom.2006.11.047
Publikováno v:
Materials Letters. 61:2609-2612
High- T c screen-printed Ho–Ba–Cu–O films were prepared on YSZ substrates by a melt processing method. The films were fired at T s = 1000–1050 °C for 5 min and cooled to 450 °C by two steps in flowing O 2 . The maximum critical current dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74924d72fe4424a0b6565661ee31081
https://doi.org/10.1016/j.matlet.2006.10.054
https://doi.org/10.1016/j.matlet.2006.10.054
Autor:
Eriko Ban, Yumiko Ikebe
Publikováno v:
Advances in Ceramic Science and Engineering. 5:35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e9ce7d1682cf6db6d85b93ca72b755
https://doi.org/10.14355/acse.2016.05.005
https://doi.org/10.14355/acse.2016.05.005