Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Yumiko Anzai"'
Autor:
Natsuki Yokoyama, Koji Fujisaki, Yumiko Anzai, Tsutsumi Takashi, Sugimoto Aritoshi, Noriyuki Sakuma, Sonoko Migitaka, Aramaki Toru, Nobuyuki Mise, Yoshitaka Sasago, Munenori Degawa
Publikováno v:
ECS Transactions. 103:1705-1712
Solid oxide fuel cells (SOFCs), which have the highest power-generation efficiency among generators, are key in achieving a low-carbon society. To reduce the cost of an SOFC system including mounting cost, thereby, expand its application, we have bee
Autor:
Kenji Okishiro, Taizo Yamawaki, Yuta Sugiyama, Shuntaro Machida, Nobuyuki Ushifusa, Chiko Yorita, Atsushi Isobe, Yoshitaka Sasago, Kohei Yoshikawa, Takahiro Odaka, Hitoshi Nakamura, Kazuo Ono, Koji Fujisaki, Shigenobu Komatsu, Yohei Nakamura, Kinoshita Masaharu, Yumiko Anzai
Publikováno v:
Advances in Science, Technology and Engineering Systems Journal. 5:151-158
Autor:
Susumu Uchiyama, Nobuhiro Shiramizu, Kentaro Osawa, Mariko Umeda, Hiroyuki Minemura, Ayano Fukuhara, Yumiko Anzai, Masami Yokoyama
Publikováno v:
Journal of pharmaceutical sciences. 110(12)
The assessment of aggregates is essential in biopharmaceutical development. Although submicron-sized aggregates are considered to have a potential immunogenicity risk, analytical techniques are limited. In this study, we present a new analytical tech
Autor:
Kinoshita Masaharu, N. Ushifusa, Atsushi Isobe, Yoshitaka Sasago, C. Yorita, Hitoshi Nakamura, Yohei Nakamura, Toshiyuki Usagawa, Kohei Yoshikawa, K. Okishiro, K. Ono, Yumiko Anzai, Koji Fujisaki, S. Komatsu, Takahiro Odaka, Shuntaro Machida, Taizo Yamawaki, Yasuhiko Sugiyama
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We have developed a SiC-FET-type gas sensor that enables highly sensitive NO detection in high-temperature exhaust gas. The gate of the FET is a gas detection layer consisting of yttria-stabilized zirconia, nickel oxide, and platinum, which are depos
Autor:
Yoshitaka Sasago, Hitoshi Nakamura, Yumiko Anzai, Tsubasa Moritsuka, Takahiro Odaka, Toshiyuki Usagawa
Publikováno v:
2017 Symposium on VLSI Technology.
New methods were studied to reduce response time and threshold voltage drift of the FET-type hydrogen sensor. The advantages of the Pt-Ti-O gate over other sensor gate materials were demonstrated. Extending Langmuir's dissociative adsorption theory t
Autor:
Nakako, FUJIWARA, Kaoru, ONO, Emiko, MORITA, Yumiko, ANZAI, Masahiro, NAGAI, Masami, MORI, Miki, KAZAWA, Satoko, YANAGISAWA, Kayoko, FURUTA
Publikováno v:
愛知県立大学看護学部紀要. 19:49-59
Autor:
Naoya Matsuura, Hiroyuki Minemura, Hiroki Iida, Toyonobu Yamashita, Tetsuya Shimanaka, Kentaro Osawa, Chika Katagiri, Yusuke Hara, Koichi Watanabe, Tomokazu Suzuki, Yumiko Anzai, Daisuke Tomita
Publikováno v:
Applied optics. 55(19)
We have demonstrated tomographic imaging of in vivo human skin with an optical interferometric imaging technique using a monochromatic light source. The axial resolution of this method is determined by the center wavelength and the NA of the objectiv
Autor:
Harukazu Miyamoto, Junko Ushiyama, Yumiko Anzai, Sugiyama Toshinori, Tsuyoshi Onuma, Akemi Hirotsune, Yasushi Miyauchi, Nobumasa Endo, Toshimichi Shintani, Takahiro Kurokawa
Publikováno v:
Japanese Journal of Applied Physics. 47:5918-5922
To reduce interlayer crosstalk caused by the ghost spot which appears in a multilayer optical disk with more than three information layers, a multilayer disk structure which reduces interlayer crosstalk with a wide disk-fabrication margin was propose
Publikováno v:
Japanese Journal of Applied Physics. 46:3917-3921
The damascene process using chemical mechanical polishing was introduced to embed a super-resolution material in the pits of a read-only memory (ROM) substrate to fabricate discs using a next-generation large-capacity optical-disc technique called th
Autor:
Takashi Kobayashi, Yoshitake Hiroshi, Koji Fujisaki, T. Takahashi, Kenzo Kurotsuchi, Akio Shima, Hiroyuki Minemura, Yumiko Anzai, Takashi Takahama, Yoshitaka Sasago, Yoshihisa Fujisaki, Toshiyuki Mine
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
A high-programming-throughput three-dimensional (3D) vertical chain-cell-type phase-change memory (VCCPCM) array for a next-generation storage device was fabricated. To increase the number of write cells at one time by reducing resistance of bit and