Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Yuma Morii"'
Autor:
Yuma Morii, Taito Watanabe, Dr. Yutaka Saga, Prof. Dr. Tetsuya Kambe, Prof. Dr. Mio Kondo, Prof. Dr. Shigeyuki Masaoka
Publikováno v:
ChemElectroChem, Vol 11, Iss 10, Pp n/a-n/a (2024)
Abstract In this study, we developed a novel electrochemical protocol that enables the functionalization of inherently inert C(sp3)−H bonds. In this protocol, one‐electron oxidation of acetic acid was used to successfully generate methyl radical,
Externí odkaz:
https://doaj.org/article/735ca07d352b4382a99cc0c1d05529e5
Publikováno v:
ECS Transactions. 50:143-153
We deposit fine metal particles on silicon (Si) by a displacement reaction, which is the immersion of Si wafers into a metal-salt solution containing hydrofluoric acid, that consists of a local cathodic reduction of metal ions and a local anodic diss
Publikováno v:
ECS Transactions. 50:31-36
Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a HF solution without electrical bias. We have been studying this etching using dissolved oxygen as an oxidizin
Publikováno v:
ECS Transactions. 33:173-180
Metal-assisted HF etching of Si has attracted considerable attention as a new electroless method that can produce porous Si by immersing metal-modified Si in a HF solution without bias. Such etching generally uses not only metal-modified Si but also
Publikováno v:
ECS Meeting Abstracts. :2371-2371
not Available.
Publikováno v:
Nanoscale Research Letters
Metal-assisted chemical etching of silicon is an electroless method that can produce porous silicon by immersing metal-modified silicon in a hydrofluoric acid solution without electrical bias. We have been studying the metal-assisted hydrofluoric aci