Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Yulin Meng"'
Autor:
Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with in
Externí odkaz:
https://doaj.org/article/422e0d6c1666484292a392651170d402
Autor:
Shaoyan Yang, Yulin Meng, Zhanguo Wang, Lianshan Wang, Weizhen Yao, Hui-dan Niu, Xianglin Liu
Publikováno v:
CrystEngComm. 23:2360-2366
Long visible light-emitting diodes (LEDs) have been proven promising in solid-state lighting covering all visible wavelengths. However, the efficiency of LEDs with high indium content in InGaN multiple quantum wells (MQWs) substantially decreases in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76f87fe398c342ccd0870f3023e03a6a
https://doi.org/10.1039/d0ce01769h
https://doi.org/10.1039/d0ce01769h
Autor:
Shaoyan Yang, Guijuan Zhao, Zhanguo Wang, Peng Jin, Yulin Meng, Fangzheng Li, Huijie Li, Lianshan Wang, Yanan Chen
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7484-7488
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb86c09871ea5d2f700a0bd51f69b9a
https://doi.org/10.1166/jnn.2018.16055
https://doi.org/10.1166/jnn.2018.16055
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7446-7450
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c737f4d825ca6e3cb1f90e19a7c22c
https://doi.org/10.1166/jnn.2018.16074
https://doi.org/10.1166/jnn.2018.16074
Publikováno v:
Superlattices and Microstructures. 110:324-329
The characteristics of AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with the last quantum well inserted into electron blocking layer(EBL) have been investigated numerically in this study. The simulation results indicate that the light-emit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8c0399fc50f44c46a632683f683ae4
https://doi.org/10.1016/j.spmi.2017.08.009
https://doi.org/10.1016/j.spmi.2017.08.009
Publikováno v:
Journal of Power Sources. 358:69-75
Micro/nano-architectured transition-metal@C hybrids possess unique structural and compositional features toward lithium storage, and are thus expected to manifest ideal anodic performances in advanced lithium-ion batteries (LIBs). Herein, we propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d62cf1f476b63ad3e16cff04b2e5d83
https://doi.org/10.1016/j.jpowsour.2017.05.029
https://doi.org/10.1016/j.jpowsour.2017.05.029
Autor:
Feifei Zhao, Pei Zhang, Du Jincai, Yawen Tang, Shaohua Wei, Yulin Meng, Wenjiao Fang, Yiming Zhou, Ping Wu, Yuguo Wang
Publikováno v:
Journal of the Taiwan Institute of Chemical Engineers. 65:552-557
Nitrogen-doped carbon nanotubes (N–C NTs) have been fabricated through a facile carbonization of polypyrrole nanotubes templating from FeOOH nanorods, and have been applied as an anode material for sodium-ion batteries (SIBs). Owing to their unique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51932d043795f03e30ad255492edd560
https://doi.org/10.1016/j.jtice.2016.05.047
https://doi.org/10.1016/j.jtice.2016.05.047
Publikováno v:
Superlattices and Microstructures. 137:106336
AlN templates have been grown on sapphire by flow-modulated metal organic chemical vapor deposition (MOCVD). By analyzing the TMAl duty ratio R, TMAl utilization ratio β and parasitic reaction ratio α, we obtained the quantitative relationship betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb924c48838501f1ba62967a54dd8b3
https://doi.org/10.1016/j.spmi.2019.106336
https://doi.org/10.1016/j.spmi.2019.106336
Autor:
L. Q. Zhang, Cuicui Zhang, Yuzhan Yang, Tingjiang Yan, Jixia Li, Zhaonan Ding, Yunhong Song, Yulin Meng
Publikováno v:
Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Micro-structural characteristics and electrical properties of an n-type GaN epilayer on Al2O3 irradiated by 290-MeV 238U32+ ions to various fluences were investigated using atomic force microscopy (AFM), scanning electron microscopy (SEM), high-resol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7a585eb7d1b6d514c00406bd2a100d3
http://europepmc.org/articles/PMC5841313
http://europepmc.org/articles/PMC5841313
Autor:
Shaoyan Yang, Guijuan Zhao, Fangzheng Li, Zhanguo Wang, Hongyuan Wei, Huijie Li, Lianshan Wang, Yulin Meng
Publikováno v:
Applied Physics A. 124
The valence band offset (VBO) of the semi-polar (11–22) plane AlN/GaN heterojunction has been directly measured by X-ray photoelectron spectroscopy. The VBO is determined to be 0.7 ± 0.2 eV and the conduction band offset is deduced to be 2.1 ± 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b5ea56de1a25c5c33b4e44d62ceb64
https://doi.org/10.1007/s00339-018-1561-1
https://doi.org/10.1007/s00339-018-1561-1