Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Yulieth Arango"'
Publikováno v:
CHIMIA, Vol 71, Iss 6 (2017)
Externí odkaz:
https://doaj.org/article/ccb72512230a47ef99a5514ca4486ee0
Autor:
Héctor Hernández, Alexander Viloria, Yulieth Arango, Augusto Jiménez, Henry Mendoza, Jhon Cadena
Publikováno v:
Ingeniería e Investigación, Vol 24, Iss 3, Pp 33-40 (2004)
Different residual strenght profiles were measured by X-Ray diffraction in areas close to the sufrace of AISI-SAE 5160H steel used in making crossbow springs. Different shotblasting conditions were used and an experimental design was developed for fi
Externí odkaz:
https://doaj.org/article/16b11e9d7230454b86c420d81c56833d
Autor:
Lars Knoll, Giovanni Alfieri, Gianpaolo Romano, Andrei Mihaila, Yulieth Arango, Moritz Wehrle, Vinoth Sundaramoorthy, Stephan Wirths
Publikováno v:
Materials Science Forum. 1062:383-388
Recently high-k gate dielectrics for SiC power MOSFETs attracted increasing research interest thanks to promising results related to improved specific channel resistances and threshold voltage stability. We investigated high-k gate stacks for 1.2kV a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60a0f467268387b066f3c22685d019c6
https://doi.org/10.4028/p-kc5309
https://doi.org/10.4028/p-kc5309
Autor:
Stephan Wirths, Giovanni Alfieri, Gianpaolo Romano, Edoardo Ceccarelli, Yulieth Arango, Andrei Mihaila, Lars Knoll
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437678f5d8630ffbcd3ee7f27d6a984c
https://doi.org/10.1109/ispsd49238.2022.9813671
https://doi.org/10.1109/ispsd49238.2022.9813671
Autor:
Stephan Wirths, Andrei Mihaila, Marco Bellini, Enea Bianda, Lars Knoll, G. Romano, Yulieth Arango, Lukas Kranz, Vinoth Sundaramoorthy
Publikováno v:
Materials Science Forum. 1004:933-938
Silicon Carbide JFETs with low on-state resistance are suitable for a number of high power applications. The static, dynamic and short circuit characterization of 600 V SiC Trench JFETs are reported in this paper. Typical JFETs fabricated with a 1.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd398d8b738786bf7d050d0a06639ac
https://doi.org/10.4028/www.scientific.net/msf.1004.933
https://doi.org/10.4028/www.scientific.net/msf.1004.933
Autor:
Yulieth Arango, Edoardo Ceccarelli, Giovanni Alfieri, Nick Schneider, Andrei Mihaila, Lars Knoll, S. Wirths, Gianpaolo Romano
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
SiC power electronics offers several advantages over Si-based technologies in terms of low-loss switching and power conversion efficiency. Especially 1.2kV SiC power MOSFETs are promising candidates to replace Si IGBTs in various applications. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c115a46ab5411b5b295f6efc3e34c4
https://doi.org/10.23919/ispsd50666.2021.9452286
https://doi.org/10.23919/ispsd50666.2021.9452286
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper reports the high-temperature dynamic behaviour of a 3.3kV–rated Silicon Carbide (SiC) Power MOSFETs with high–k gate stack. Several devices have been tested under nominal and SOA bias conditions during standard inductive load switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c694cf3535d06334fa92193cf0c004d0
https://doi.org/10.23919/ispsd50666.2021.9452193
https://doi.org/10.23919/ispsd50666.2021.9452193
Autor:
G. Romano, Yulieth Arango, B. Boksteen, A. Mihaila, Lars Knoll, A. Baschnagel, S. Wirths, C. Liu, Enea Bianda
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents for the first time an experimental investigation into the surge current capability of 6.5kV-rated SiC MOSFETs. The performance of both MOSFET’s body diode and its channel in the 3rd quadrant operation has been tested. Static mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5180889f2af20a607c13fe0eb83e093e
https://doi.org/10.1109/ispsd46842.2020.9170186
https://doi.org/10.1109/ispsd46842.2020.9170186
Autor:
Manuel Belanche, G. Romano, Andrei Mihaila, Enea Bianda, Lars Knoll, Marco Bellini, Elena Mengotti, Yulieth Arango, Giovanni Alfieri, Stephan Wirths
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Despite the recent progress in SiC power MOSFET technology and its commercialization, the defective MOS interface still hampers the exploitation of the full potential of these devices. We present results using our high-k gate stack technology that sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e65c4f9399f1e93cf754fd3251fe55
https://doi.org/10.1109/ispsd46842.2020.9170122
https://doi.org/10.1109/ispsd46842.2020.9170122
Autor:
Alyssa Prasmusinto, Yulieth Arango, Lukas Kranz, Marco Bellini, A. Mihaila, Lars Knoll, S. Wirths, Enea Bianda, G. Romano, Charalampos Papadopoulos
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The static and dynamic performance of Silicon Carbide (SiC) MOSFET rated for 1200V applications has been investigated. MOSFETs with a planar design and several different cell pitches have been fabricated. Special attention has been dedicated to the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7f923d69aaa47511d0f885f89a6271
https://doi.org/10.1109/ispsd.2019.8757648
https://doi.org/10.1109/ispsd.2019.8757648