Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Yukiyasu Arisawa"'
Autor:
Masato Naka, Keisuke Chiba, Ai Kumada, Keiko Morishita, Kosuke Takai, Ryoji Yoshikawa, Yukiyasu Arisawa, Takashi Kamo, Eishi Shiobara, Shingo Kanamitsu
Publikováno v:
Proceedings of SPIE; 7/30/2019, Vol. 11148, p111480X-1-111480X-18, 18p
Autor:
Masamitsu Ito, Shingo Kanamitsu, Kazuki Hagihara, Yukiyasu Arisawa, Kunihiro Ugajin, Machiko Suenaga, Masato Saito, Keisuke Yagawa, Takeharu Motokawa, Sachiko Kobayashi
Publikováno v:
SPIE Proceedings.
Nanoimprint lithography (NIL) technology is in the spotlight as a next-generation semiconductor manufacturing technique for integrated circuits at 22 nm and beyond. NIL is the unmagnified lithography technique using template which is replicated from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4174b94ca09a530d87f8976883ef9252
https://doi.org/10.1117/12.2218809
https://doi.org/10.1117/12.2218809
Publikováno v:
SPIE Proceedings.
In this study, influence of geometric features of phase defect on EUV optical images, such as dark field images(ABI tool) and bright field images (Exposure tool), was studied with experiment and simulation. It is confirmed that ABI signal intensity h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4761f40438f2f19820bcb5f80f78395
https://doi.org/10.1117/12.2046139
https://doi.org/10.1117/12.2046139
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
The influence of surface roughness of an EUV mask on wafer image has been thoroughly investigated by lithography simulation with the Monte Carlo method. Based on the power spectral density of the surface roughness of an actual mask, and based on a gi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583d2e4b033e549b4159dd123474108d
https://doi.org/10.1117/12.2011635
https://doi.org/10.1117/12.2011635
Publikováno v:
SPIE Proceedings.
In this work, a simulation for actinic dark-field inspection with amplitude defects was carried out. The simulation was then followed by experiments on actinic dark-field inspection with programmed amplitude defects. For this experiment, the programm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dfa11192980ae84824d679274f8fa4
https://doi.org/10.1117/12.916320
https://doi.org/10.1117/12.916320
Publikováno v:
SPIE Proceedings.
Phase defect printability and imaging characteristics were investigated by using aerial image simulation to clarify the phase defect impact on patterns depending on defect types, and on exposure conditions. In particular, the difference between the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab183b94cf9237848c5e4b1159b4aa6
https://doi.org/10.1117/12.916387
https://doi.org/10.1117/12.916387
Publikováno v:
SPIE Proceedings.
A variety of phase defects (PDs) such as programmed bump and pit PDs, and native bump and pit PDs were detected by a dark-field ABI (Actinic Blank Inspection) tool. Among the PDs, some of them seemed to grow and propagate in an angular direction, awa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309cfff1c5cc98dce70bd5fc36e14da7
https://doi.org/10.1117/12.916309
https://doi.org/10.1117/12.916309
Autor:
Kazuo Tawarayama, Hajime Aoyama, Tetsunori Murachi, Gilroy Vandentop, Takashi Kamo, Yukiyasu Arisawa, Yashesh Shroff, Toshihiko Tanaka, Ichiro Mori, Alan Myers, Yuusuke Tanaka, Taiga Uno
Publikováno v:
SPIE Proceedings.
This paper describes the critical dimension (CD) accuracy of metal-layer patterns for the 15-nm logic node and beyond replicated with model-based optical proximity correction, flare variation compensation, and shadowing effect correction. The model f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb08573926625b28b35dbe20aa0df6b
https://doi.org/10.1117/12.878672
https://doi.org/10.1117/12.878672
Autor:
Kazuo Tawarayama, Osamu Suga, Yukiyasu Arisawa, Hajime Aoyama, Takashi Kamo, Toshihiko Tanaka
Publikováno v:
SPIE Proceedings.
When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. Thin absorber mask with light-shield b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4457d15733458d004a978789964062
https://doi.org/10.1117/12.867774
https://doi.org/10.1117/12.867774
Publikováno v:
SPIE Proceedings.
We are focusing on the establishment of a flare correction technique for half pitch (HP) 22-nm generation in Extreme Ultra Violet Lithography (EUVL). However, there are some difficulties in the areas of flare calculation and edge biasing, associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::605c6fc6ad0bfb6e124e3ae97f261664
https://doi.org/10.1117/12.867911
https://doi.org/10.1117/12.867911