Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Yukio Narukawa"'
Publikováno v:
physica status solidi (a). 205:1081-1085
We fabricated three types of high luminous efficiency white light emitting diodes (LEDs). The first is the white LED, which had a high luminous efficiency (ηL) of 161 lm/W with the high luminous flux (ϕv) of 9.89 lm at a forwardbias current of 20 m
Autor:
Hiroki Narimatsu, Takao Yamada, Masahiko Sano, Takahiko Sakamoto, Yukio Narukawa, Takashi Mukai, Junya Narita
Publikováno v:
physica status solidi (a). 204:2087-2093
We fabricated three types of white light emitting diodes (LEDs). The first is the white LED, which has a high general color rendering index (R 0 ) of 97 and CRI-No. 9 of 96. The CRI-No. 9 denotes the color reproduction in the red region. These values
Autor:
Yoichi Kawakami, M. Ueda, Mitsuru Funato, Kouichi Hayashi, Yukio Narukawa, Takeshi Kondou, Takashi Mukai
Publikováno v:
physica status solidi (c). 4(7):2826-2829
The growth mechanisms during metalorganic vapor phase epitaxy of InGaN quantum wells (QWs) on three-dimensional GaN microfacet structures composed of (0001) and {11-22} planes were investigated. The cross section of the microfacet structures formed b
Autor:
Alexander Shvartser, Koichi Okamoto, Isamu Niki, Yukio Narukawa, Yoichi Kawakami, Takashi Mukai, Axel Scherer, George Maltezos
Publikováno v:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 204(6):2103-2107
Surface plasmon (SP) coupling technique was used to enhance blue and green light emissions from InGaN/GaN quantum wells (QWs). Large enhancement of photoluminescence (PL) of both blue and green emissions was observed with silver coated samples, where
Autor:
Takao Kosugi, Yukio Narukawa, Yoichi Kawakami, M. Ueda, Mitsuru Funato, M. Takahashi, Takashi Mukai
Publikováno v:
Japanese Journal of Applied Physics. 45:L659-L662
We demonstrate the fabrication of blue, green, and amber InGaN/GaN light-emitting diodes (LEDs) on semipolar {11-22} bulk GaN substrates. The {11-22}GaN substrates used in this study are produced by cutting out from a c-oriented GaN bulk crystal grow
Publikováno v:
physica status solidi c. 3:1897-1901
We performed near-field photoluminescence (PL) mapping and atomic force microscopy at the same scanning area to clarify relationship between luminescence dynamics and threading dislocations in violet and blue light emitting InGaN single-quantum-well
Publikováno v:
IEICE Transactions on Electronics. :1860-1871
In search of suitable white-LED for general illumination, we fabricated various types of white-LEDs using different methods. As the first method, we used the multichip method in which multiple emitters were mounted in one package. This type showed a
Publikováno v:
physica status solidi (c). 2:2841-2844
We use surface plasmons to increase the light emission efficiency from InGaN/GaN quantum wells by covering these with thin metallic films. Large luminescence enhancements were measured when silver or aluminum layers are deposited 10 nm above an InGaN
Autor:
Akio Kaneta, Yoichi Kawakami, Giichi Marutsuki, Takashi Mukai, Yukio Narukawa, Daisuke Yamada
Publikováno v:
physica status solidi (c). 2:2728-2731
Spatial distribution of photoluminescence (PL) spectra has been assessed in violet light emitting InGaN single-quantum-well (SQW) structures by employing a scanning near-field optical microscope (SNOM) at room temperature. Clear correlation has been
Autor:
Teruhisa Kotani, Yoshitaka Hatada, Mitsuru Funato, Shigeo Fujita, Takashi Mukai, Yoichi Kawakami, Yukio Narukawa
Publikováno v:
physica status solidi (c). 2:2895-2898
We fabricated GaN-based ultraviolet laser structures having air/semiconductor distributed Bragg reflectors (DBR) as a cavity mirror by focused ion beam (FIB) etching. The designed structure consisted of 5 pairs of 3λ/4 air gaps and 7λ/4 semiconduct