Zobrazeno 1 - 10
of 238
pro vyhledávání: '"Yukinori Morita"'
Publikováno v:
APL Materials, Vol 10, Iss 5, Pp 051110-051110-7 (2022)
Ferroelectricity and crystallinity of TiN/ZrO2/HfxZr1−xO2 (Hf:Zr = 0.43:0.57; HZO)/SiO2/Si metal–ferroelectric–semiconductor (MFS) capacitors with a top ZrO2 nucleation layer fabricated by low-temperature processes at 300 °C of atomic layer de
Externí odkaz:
https://doaj.org/article/540125ad3abc4c3786753390ceef2ecc
Autor:
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Takahiro Mori, Yukinori Morita, Takashi Matsukawa, Mitsuru Takenaka, Shinichi Takagi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 341-345 (2020)
We have examined impacts of gate insulator (Al2O3 or HfO2) and gate electrode (TiN or W) on electrical performance of ZnSnO/Si bilayer tunneling field-effect transistors (TFETs). It is found from the capacitance-voltage (C-V) characteristics that the
Externí odkaz:
https://doaj.org/article/2fe5badc75f94a6cb017f287af926196
Autor:
Fayong Liu, Zhongwang Wang, Soya Nakanao, Shinichi Ogawa, Yukinori Morita, Marek Schmidt, Mayeesha Haque, Manoharan Muruganathan, Hiroshi Mizuta
Publikováno v:
Micromachines, Vol 11, Iss 4, p 387 (2020)
This paper demonstrates that the electrical properties of suspended graphene nanomesh (GNM) can be tuned by systematically changing the porosity with helium ion beam milling (HIBM). The porosity of the GNM is well-controlled by defining the pitch of
Externí odkaz:
https://doaj.org/article/24815a27035e44508e1af9ba277aaff6
Publikováno v:
AIP Advances, Vol 8, Iss 5, Pp 055024-055024-6 (2018)
The effect of post-implantation annealing (PIA) on Al–N isoelectronic trap (IET) formation in silicon has been experimentally investigated to discuss the Al–N IET formation and implantation-induced defect recovery mechanisms. We performed a photo
Externí odkaz:
https://doaj.org/article/f8463f55bc63469c9f95939833ee14fa
Autor:
Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 153-167 (2014)
The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SC
Externí odkaz:
https://doaj.org/article/3e635bb4b22f44f3b06ee54bc2dd1256
Autor:
Kazuhiko Endo, Shinji Migita, Yuki Ishikawa, Takashi Matsukawa, Shin-ichi O'uchi, Junji Tsukada, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Hitomi Yamauchi, Meishoku Masahara
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 4, Iss 2, Pp 110-118 (2014)
A threshold voltage (Vth) controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate have been investigated. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coup
Externí odkaz:
https://doaj.org/article/68c0115a793444148a5edf8eb43e28f1
Publikováno v:
ECS Transactions. 104:129-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe34bc5531cdca1c3228efebea9aaaf4
https://doi.org/10.1149/10404.0129ecst
https://doi.org/10.1149/10404.0129ecst
Autor:
Kimihiko Kato, Mitsuru Takenaka, Tetsufumi Tanamoto, Shinichi Takagi, Yukinori Morita, Takashi Matsukawa, Takahiro Mori
Publikováno v:
IEEE Transactions on Electron Devices. 67:3876-3882
Impacts of switching voltage of a bilayer tunneling field-effect transistor (TFET) with extremely small subthreshold swing on energy consumption in static and dynamic circuits are investigated in this study. The TFET circuit simulation under an opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f34e2217b352c054fd0f358089c6c792
https://doi.org/10.1109/ted.2020.3010177
https://doi.org/10.1109/ted.2020.3010177
Autor:
Hiroshi Fuketa, Yukinori Morita
Publikováno v:
IEEE Sensors Journal. 20:7819-7825
This paper presents an ultra-low power human proximity sensor using electrostatic induction. The analytical model of electrostatic induction current generated by human motion is derived and verified with measurement results. Based on the analytical m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2db2c46f712eee51bc91c6a2f1822fcf
https://doi.org/10.1109/jsen.2020.2981142
https://doi.org/10.1109/jsen.2020.2981142
Autor:
Kimihiko Kato, Shinichi Takagi, Hitoshi Tabata, Hiroaki Matsui, Takahiro Mori, Kwang-Won Jo, Takashi Matsukawa, Mitsuru Takenaka, Yukinori Morita
Publikováno v:
IEEE Transactions on Electron Devices. 67:1880-1886
We propose a p-channel bilayer TFET composed of an n-type oxide semiconductor (n-OS)/p-type group-IV semiconductor (p-IV) heterostructure, allowing us to realize both n- and p-channel TFET operations under the same device structure. Here, the p-IV si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f458116e0bf6d9b0e1b2cb072abfff92
https://doi.org/10.1109/ted.2020.2975582
https://doi.org/10.1109/ted.2020.2975582