Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Yukinori HIROSE"'
Autor:
Tessai Sugiura, Atsuyoshi Uranishi, Taiji Kobayashi, Yasuda Toshihiro, Yukinori Hirose, Fujio Terai, Sakamoto Naoya
Publikováno v:
Volume 1: Beyond Design Basis; Codes and Standards; Computational Fluid Dynamics (CFD); Decontamination and Decommissioning; Nuclear Fuel and Engineering; Nuclear Plant Engineering.
In January 2012, Toshiba Energy Systems & Solutions Corporation inserted a camera into the damaged Primary Containment Vessel (PCV) of Fukushima Daiichi Nuclear Power Station unit 2 for the first time since the Great East Japan Earthquake. Since then
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22ba9b48df2971a5fece296da80822e
https://doi.org/10.1115/icone2020-16978
https://doi.org/10.1115/icone2020-16978
Autor:
Koyu Asai, Kyoichiro Asayama, Koji Nakamae, Nobuyoshi Hattori, Yukinori Hirose, N. Murata, Keiichiro Kashihara, Shuichi Kudo, Toru Koyama, Kazuyoshi Maekawa, Tadashi Yamaguchi, Toshiharu Katayama
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 27:16-21
This is the first paper to reveal the formation mechanism of the abnormal growth of nickel silicide that causes leakage-current failure in complementary metal-oxide- semiconductor (CMOS) devices by using advanced transmission electron microscope (TEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::489c74e58470ce01486e9d71bab0e6de
https://doi.org/10.1109/tsm.2013.2284593
https://doi.org/10.1109/tsm.2013.2284593
Autor:
Yukinori Hirose, Kenichi Mori, Kazuhito Honda, Koyu Asai, Masayuki Kojima, Kazuyoshi Maekawa, Naohito Suzumura, Akira Uedono
Publikováno v:
Microelectronic Engineering. 85:2137-2141
The reliability of Cu interconnects was successfully improved by applying a CuAl alloy seed. However, the effect of additive Al on the reliability is not fully understood. In order to reveal the reliability improvement mechanism, Cu films using CuAl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e728128e4f036497abcd5b76d7a8aba5
https://doi.org/10.1016/j.mee.2008.04.004
https://doi.org/10.1016/j.mee.2008.04.004
Autor:
Yukinori Hirose, Akira Uedono, Kouichi Tsuji, Hiroshi Miyazaki, Kazuyoshi Maekawa, Kazuhito Honda
Publikováno v:
BUNSEKI KAGAKU. 56:465-470
Cuデュアルダマシン配線の信頼性向上策として，合金シードを用いた配線形成プロセスが提案されている．本研究では，二次イオン質量分析法，電子線後方散乱回析，低速陽電子消滅法
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90aa4983b2edb283fbbcd62899619b09
https://doi.org/10.2116/bunsekikagaku.56.465
https://doi.org/10.2116/bunsekikagaku.56.465
Autor:
Yukinori Hirose, Koji Fukumoto
Publikováno v:
Journal of the Surface Finishing Society of Japan. 54:21-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be95a615f8109deb230f3d4e694b774b
https://doi.org/10.4139/sfj.54.21
https://doi.org/10.4139/sfj.54.21
Publikováno v:
Microelectronics Reliability. 37:1615-1618
We discuss the improvement on a three-dimensional analysis of multilayer wiring process failure. We have applied this technique to Al-plug multilayer wiring and have successfully confirmed the precise failure point three-dimensionally without causing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be3e377cfd41985e44445eb23968bb29
https://doi.org/10.1016/s0026-2714(97)00123-6
https://doi.org/10.1016/s0026-2714(97)00123-6
Autor:
Yukinori Hirose, H. Kimura, Nobuyoshi Hattori, Shuichi Kudo, M. Mizuo, Junichi Tsuchimoto, Tadashi Yamaguchi
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4072c8a1262bdc79b0c1ef888c4265ce
https://doi.org/10.7567/ssdm.2013.b-1-4
https://doi.org/10.7567/ssdm.2013.b-1-4
Autor:
Akio Nishida, K. Eguchi, Masao Inoue, Koji Nakamae, Shuichi Kudo, K. Funayama, Yukinori Hirose, Nobuyoshi Hattori, Kyoichiro Asayama, K. Ohgata, Toru Koyama
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
A detailed structural analysis of Hf-doped SiON dielectrics was performed by using advanced physical analysis techniques: Cs-corrected scanning transmission electron microscopy (STEM) and three-dimensional (3-D) atom-probe (AP) tomography. We confirm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7122d69de181bb1f069ef71f99ba8804
https://doi.org/10.1109/irps.2013.6532025
https://doi.org/10.1109/irps.2013.6532025
Autor:
M. Mizuo, Nobuyoshi Hattori, Tadashi Yamaguchi, Yukinori Hirose, H. Kimura, Junichi Tsuchimoto, Shuichi Kudo
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826b2729963d9db68db3cbc9e518ad68
https://doi.org/10.7567/ssdm.2012.d-2-2
https://doi.org/10.7567/ssdm.2012.d-2-2
Autor:
Takashi Ide, Yorinobu Kunimune, Nobuyoshi Hattori, Toru Koyama, N. Nakanishi, Yukinori Hirose, H. Arie
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53918a1a66845f43a63ef6b959ddd7c7
https://doi.org/10.7567/ssdm.2011.c-4-3
https://doi.org/10.7567/ssdm.2011.c-4-3