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pro vyhledávání: '"Yukinari Yamashita"'
Autor:
Noriaki Oda, Morio Shiohara, Seiichi Kondo, Yukinari Yamashita, Shuichi Saito, Kentaro Tokuri
Publikováno v:
Japanese Journal of Applied Physics. 49:05FF04
When post-etch cleaning was carried out in Cu dual-damascene process, Cu at the bottom of isolated via was etched out especially in the wafer edge, and this would become a critical issue as device scale is shrunk. The corrosion was caused in the rins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b67250f2603b63bf1b53609685101c
https://doi.org/10.1143/jjap.49.05ff04
https://doi.org/10.1143/jjap.49.05ff04
Autor:
Seiichi Kondo, Takashi Futatsuki, Masayoshi Imai, Yukinari Yamashita, Morio Shiohara, Shuichi Saito
Publikováno v:
Japanese Journal of Applied Physics. 48:04C023
We investigated Cu corrosion at the via bottom of multi-layered Cu interconnects that occurred after post-etching wet cleaning and caused via open failures. We found that oxygen was dissolved into de-ionized water (DIW) on the wafer edge from the air
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5985f125b5480e78bb57d8ae0f7c707
https://doi.org/10.1143/jjap.48.04c023
https://doi.org/10.1143/jjap.48.04c023
Conference
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