Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Yukiko Furukawa"'
Publikováno v:
Nishi Nihon Hifuka. 84:333-336
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e779097c424954aca586dd7abfaf482
https://doi.org/10.2336/nishinihonhifu.84.333
https://doi.org/10.2336/nishinihonhifu.84.333
Publikováno v:
Nishi Nihon Hifuka. 83:291-292
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd83287991b0816c14e455a7e18eb8c
https://doi.org/10.2336/nishinihonhifu.83.291
https://doi.org/10.2336/nishinihonhifu.83.291
Publikováno v:
Geochimica et Cosmochimica Acta. 74:4893-4901
The atmospheric 3 He/ 4 He ratio has been considered to be constant on a global scale, because the residence time of helium is significantly longer than the mixing time in the atmosphere. However, this ratio may be decreasing with time owing to the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::817e2bb24260fc6fbc89b7051e57fb97
https://doi.org/10.1016/j.gca.2010.06.003
https://doi.org/10.1016/j.gca.2010.06.003
Publikováno v:
Microelectronic Engineering. 76:25-31
XPS analysis on the sidewall surface of Orion2.2, a CVD SiOC type low-k dielectric (k~2.2), has been performed to study the modification of low-k material during etching and strip. The sidewall surface etched in Ar/CF"4/CH"2F"2/O"2 consists of two la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955629f8a00d3bf121b69643ca2d036d
https://doi.org/10.1016/j.mee.2004.07.017
https://doi.org/10.1016/j.mee.2004.07.017
Autor:
M. Van Hove, Hugo Bender, I. Vos, Quoc Toan Le, M. Patz, Karen Maex, Francesca Iacopi, Herbert Struyf, F.K. de Theije, Zs. Tokei, Caroline Whelan, V.H. Nguyen, Gerald Beyer, A. Das, Michele Stucchi, L. Carbonell, Valentina Terzieva, M. Maenhoudt, Yukiko Furukawa
Publikováno v:
Microelectronic Engineering. 70:308-313
Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913bdfa74192c0f04e39ef0c09473178
https://doi.org/10.1016/s0167-9317(03)00367-8
https://doi.org/10.1016/s0167-9317(03)00367-8
Publikováno v:
Microelectronic Engineering. 70:267-273
XPS analysis on single damascene (SD) patterned wafers was performed to study the modification of materials, especially the sidewall, during etching and strip. LKD-5109, MSQ-type materials (k≈2.2) were used as ILD, SiC/SiO2 as top hard mask (HM), a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::253b590b997225df4597eab8fcc2f2a6
https://doi.org/10.1016/s0167-9317(03)00381-2
https://doi.org/10.1016/s0167-9317(03)00381-2
Autor:
Mikhail R. Baklanov, Marcel A. Verheijen, Femke Karina de Theije, Konstantin P. Mogilnikov, Yukiko Furukawa, A. Ruud Balkenende
Publikováno v:
The Journal of Physical Chemistry B. 107:4280-4289
A method to control the hydrophobicity and dielectric constant of mesoporous silica films for ultralow-k applications is described. Several surfactants have been used as sacrificial materials in (organo)silicate matrixes, prepared from tetraethoxysil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e7814c444480c8db2a5381ff301f89
https://doi.org/10.1021/jp027701y
https://doi.org/10.1021/jp027701y
Publikováno v:
Journal of the Ceramic Society of Japan. 104:900-903
The relationship between the grain growth and the wettability of grains by a liquid phase was discussed on the basis of the observation of the microstructure of La-doped SrTiO3 ceramics and the measurement of the contact angle of the liquid phase (Sr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566257ff10f4ec9bf426737342c8c7af
https://doi.org/10.2109/jcersj.104.900
https://doi.org/10.2109/jcersj.104.900
Publikováno v:
Journal of the Ceramic Society of Japan. 104:190-195
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0a0ce87381130a333385f4428ef8012
https://doi.org/10.2109/jcersj.104.190
https://doi.org/10.2109/jcersj.104.190
Publikováno v:
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).
In this article a linewidth shrink of at least 20% due to deformation of a 193 nm-photo resist (PR) during etch is presented. The deformation of the resist takes place mainly at the top, resulting in an overhang and a decreased linewidth during singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d256bcafcc03f5790aeef71605f59976
https://doi.org/10.1109/iitc.2003.1219738
https://doi.org/10.1109/iitc.2003.1219738