Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Yukihiro Kusumi"'
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A. 69:993-1000
A new method of nondestructive estimation of the in-depth distribution of residual stresses is proposed by using monochromatic high-energy X-rays from synchrotron radiation source SPring-8. The X-ray with 72 keV energy was used for stress measurement
Autor:
Kouji Nishio, Kazuo Arai, Yoshiaki Akiniwa, Etsuya Yanase, Yukihiro Kusumi, Kenji Suzuki, Keisuke Tanaka
Publikováno v:
Materials Science Forum. :341-348
A high-energy X-ray beam from a synchrotron radiation source, SPring-8, was used to determine the residual stress distribution below the shot-peened surface of a carbon steel plate. By using the monochromatic X-ray beam with three energy levels of 30
Autor:
Etsuya Yanase, Yukihiro Kusumi, Keisuke Tanaka, Kouji Nishio, Yoshiaki Akiniwa, Kazuo Arai, Hirohisa Kimachi, Kenji Suzuki
Publikováno v:
Journal of the Society of Materials Science, Japan. 51:756-763
This paper described a new nondestructive measurement of the in-depth distribution of residual stresses by using monochromatic high energy X-rays from synchrotron radiation source of SPring-8. The measurement was carried out by using the sin2ψ metho
Autor:
Konstantin Vladimirovich Zolotarev, Kozi Nishio, Yukihiro Kusumi, Kazuo Arai, Etsuya Yanase, Shigetomo Nakagawa
Publikováno v:
Journal of Neutron Research. 9:273-279
A new method was proposed to estimate the distribution of residual stress in a sample surface. When a sample surface has stress gradient, we cannot easily understand the stress distribution due to non-linearity of Sin2 ψ diagram. This non-linearity
Publikováno v:
Physical Review B. 58:1126-1129
Steps on a $\mathrm{Si}(111)\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}\ensuremath{-}\mathrm{G}\mathrm{a}$ surface that was inclined toward the [1\ifmmode\bar\else\textasciimacron\fi{}1\ifmmode\bar\else\textasciimacron\fi{}2] direction were ob
Publikováno v:
Journal of Applied Physics. 83:5890-5895
We investigated the current–voltage (I–V) characteristics of the Si (111) surface partially terminated by Ga atoms by using scanning tunneling microscopy. On the surface, Si (111) 7×7 and Si (111) √3×√3 Ga terraces alternated. The I–V cur
Publikováno v:
Surface Review and Letters. :665-673
Nanoscale stripes of the Si(111)-(7 × 7) structure with atomic accuracy can be formed on the [Formula: see text]-terminated Si(111) surface, by selective thermal desorption of Ga atoms from step edges, when the surface is tilted toward the [Formula:
Publikováno v:
Journal of Applied Physics. 83:205-211
We demonstrated that spatially controlled self-organization in Ge clustering occurs on partially Ga-terminated Si(111) surfaces with both Ga-adsorbed 3×3 and Ga-desorbed 7×7 striped areas on them. Ge growth on Si(111) 3×3 surfaces proceeds in a mo
Publikováno v:
Surface Review and Letters. :535-542
We have developed microprobe reflection high energy electron diffraction combined with scanning tunneling microscope and molecular beam epitaxy equipment. This combination makes it possible to study and control surface processes in the magnification
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1603-1607
Scanning tunneling microscopy is used to study the initial stage of Sb adsorption on Si(111) surfaces with the 7×7 and √3×√3-Ga structures. It has been found that Sb is preferentially adsorbed on the 7×7 regions at 430 °C, owing to the differ