Výsledky vyhledávání - "Yukihiro, Takada"

Thermal Properties of Inorganic Nanostructures

Autor: Takahiro Yamamoto, Yukihiro Takada, Eduardo R. Hernández

Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 266References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4cc0383b48d62d0c557b8d6cdb4d4d19
https://doi.org/10.1201/b19528-15

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Mechanical Properties of Inorganic Nanostructures

Autor: Eduardo R. Hernández, Takahiro Yamamoto, Yukihiro Takada

Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 244References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73dacbafe8939cfd78e40c187532cbc4
https://doi.org/10.1201/b19528-14

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Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact

Autor: Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi, Masakazu Muraguchi

Publikováno v: Key Engineering Materials. 470:43-47

Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends, nano-scale Ohmic contacts are indispensable for future LSI technologies such as metallic source and drain con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::17c82ef098dd45a7bf6b40ccccf8f115
https://doi.org/10.4028/www.scientific.net/kem.470.43

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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure

Autor: Yoko Sakurai, Seiichi Miyazaki, Kenji Shiraishi, Masakazu Muraguchi, Katsunori Makihara, Yukihiro Takada, Mitsuhisa Ikeda, Shintaro Nomura, Yasuteru Shigeta, Tetsuo Endoh

Publikováno v: Key Engineering Materials. 470:48-53

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d83f8f2930daba7a3ec0b24a3402cb2d
https://doi.org/10.4028/www.scientific.net/kem.470.48

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Importance of electronic state of two-dimensional electron gas for electron injection process in nano-electronic devices

Autor: Shintaro Nomura, Seiichi Miyazaki, Yasuteru Shigeta, Katsunori Makihara, Mitsuhisa Ikeda, Masakazu Muraguchi, Y. Sakurai, Yukihiro Takada, Kenji Shiraishi, Tetsuo Endoh

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 42:2602-2605

We report the unexpected temperature dependence of electron tunneling from the two-dimensional electron gas (2DEG) to the Si-dot in a Si-dots floating gate metal-oxide-semiconductor (MOS) capacitor. We indicate that this temperature dependence of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::360d9f99b962159f1740572cc215e368
https://doi.org/10.1016/j.physe.2009.12.025

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Proposal of a new physical model for Ohmic contacts

Autor: Kenji Shiraishi, Shintaro Nomura, Tetsuo Endoh, Yukihiro Takada, Masakazu Muraguchi

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 42:2837-2840

Ohmic contacts are crucial for both device applications and the study of fundamental physics. In this study, we propose a new physical model for Ohmic contacts based on the detailed considerations of a metal/semiconductor interface, such as charge ne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::064c8ab336cf003320fa187acdc28899
https://doi.org/10.1016/j.physe.2010.02.011

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Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

Autor: Tetsuo Endoh, Seiichi Miyazaki, Yukihiro Takada, Yasuteru Shigeta, Shintaro Nomura, Masakazu Muraguchi, Juin-Ichi Iwata, Katsunori Makihara, Yoko Sakurai, Mitsuhisa Ikeda, Kenji Shiraishi

Publikováno v: ECS Transactions. 28:369-374

We present results of the electron tunneling between Si-dots and the two-dimensional electron gas (2DEG) under the optical excitation at low temperatures, where modification of the 2DEG is caused by optical generation of the electron-hole pairs. We h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dd4e1379aef5ee87fc8d8d6a2f66b19
https://doi.org/10.1149/1.3375623

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Investigation of the New Physical Model of Ohmic Contact for Future Nanoscale Contacts

Autor: Kenji Shiraishi, Shintaro Nomura, Tetsuo Endoh, Masakazu Muraguchi, Yukihiro Takada

Publikováno v: ECS Transactions. 28:73-79

Fabrication of a good Ohmic contact is quite important not only for device applications but also for fundamental physics. In accordance with the device scaling, it is inevitable to prepare nano-scale Ohmic contacts for future LSIs technology [1]. How

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::754d3e628aa592cd7b42c22c1518482c
https://doi.org/10.1149/1.3375590

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