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Autor:
Yukihide Hakone, K. Yoshimatsu, Naohisa Inoue, Yuichi Kawamura, Hidetoshi Iwamura, Taichiro Ito
Publikováno v:
Applied Surface Science. :725-728
Bistable behavior of electroluminescence (EL) was studied for the InAlAs/InP type II MQW diodes grown by gas source molecular beam epitaxy. The bistability of the current-light output ( I-L ) characteristic is clearly observed at 80 K, and it exactly